Patents by Inventor SHENGCHENG MAO

SHENGCHENG MAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10410822
    Abstract: A double-tilt in-situ nanoindentation platform for TEM (transmission electron microscope) belongs to the field of in-situ characterization of the mechanical property-microstructure relationship of materials at the nano- and atomic scale. The platform is consisted of adhesive area, support beams, bearing beams, sample loading stage and mini indenter. The overall structure of the platform is prepared by semiconductor microfabrication technology. The in-situ nanoindentation experiment can be driven by bimetallic strip, V-shaped electro-thermal beam, piezoelectric ceramics, electrostatic comb or shape memory alloys et. al. The sample is obtained by focused ion beam cutting. The integrated platform can be placed in the narrow space on the front end of the TEM sample holder, giving rise to the condition of double-axis tilt. The driving device drives the mini indenter to carry out in-situ nanoindentation, in-situ compression and in-situ bending and the like of the materials in TEM.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: September 10, 2019
    Assignee: BEIJING UNIVERSITY OF TECHNOLOGY
    Inventors: Xiaodong Han, Zhipeng Li, Shengcheng Mao, Xiaodong Wang, Chunqiang Zhuang, Jianfei Zhang, Qingsong Deng, Yadi Zhai, Taonan Zhang, Ze Zhang
  • Publication number: 20180053625
    Abstract: A double-tilt in-situ nanoindentation platform for TEM (transmission electron microscope) belongs to the field of in-situ characterization of the mechanical property-microstructure relationship of materials at the nano- and atomic scale. The platform is consisted of adhesive area, support beams, bearing beams, sample loading stage and mini indenter. The overall structure of the platform is prepared by semiconductor microfabrication technology. The in-situ nanoindentation experiment can be driven by bimetallic strip, V-shaped electro-thermal beam, piezoelectric ceramics, electrostatic comb or shape memory alloys et. al. The sample is obtained by focused ion beam cutting. The integrated platform can be placed in the narrow space on the front end of the TEM sample holder, giving rise to the condition of double-axis tilt. The driving device drives the mini indenter to carry out in-situ nanoindentation, in-situ compression and in-situ bending and the like of the materials in TEM.
    Type: Application
    Filed: November 11, 2016
    Publication date: February 22, 2018
    Applicant: BEIJING UNIVERSITY OF TECHNOLOGY
    Inventors: XIAODONG HAN, ZHIPENG LI, SHENGCHENG MAO, XIAODONG WANG, CHUNQIANG ZHUANG, JIANFEI ZHANG, QINGSONG DENG, YADI ZHAI, TAONAN ZHANG, ZE ZHANG