Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: The invention discloses a method of processing Zingiber zerumbet for producing a processed sample of Zingiber zerumbet, which easily releases flavonoids in a following extraction process. The method includes the steps of: soaking a raw sample of Zingiber zerumbet with a processing reagent selected from rice vinegar or yellow wine at 23-27° C. for 20-28 hours; and steaming the soaked product at 0.6-1.4 kg/cm2, 80-120° C. for 20-40 minutes.

Abstract: The invention discloses a method of processing Zingiber zerumbet for producing a processed sample of Zingiber zerumbet, which easily releases flavonoids in a following extraction process. The method includes the steps of: soaking a raw sample of Zingiber zerumbet with a processing reagent selected from rice vinegar or yellow wine at 23-27° C. for 20-28 hours; and steaming the soaked product at 0.6-1.4 kg/cm2, 80-120° C. for 20-40 minutes.