Patents by Inventor Shengfa LIANG

Shengfa LIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10964529
    Abstract: The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: March 30, 2021
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Lei Zhou, Shengfa Liang, Xiaojing Li, Hao Zhang, Changqing Xie, Ming Liu
  • Patent number: 9762217
    Abstract: A sampler adapted to a one-dimension slow-varying signal, including: a signal preprocessing unit configured to preprocess an input signal; a slope-controllable sawtooth wave signal generating unit configured to generate a slope-controllable sawtooth wave signal and perform zero-resetting; a signal comparing unit configured to compare the preprocessed input signal from the signal preprocessing unit with the sawtooth wave signal and to output a pulse signal to the generating unit and a signal outputting unit when the preprocessed input signal is equal to the sawtooth wave signal; a counting unit configured to count a number of clock signals while the sawtooth wave signal generating unit is generating the sawtooth wave signal and to transmit the counted number to the signal outputting unit; the signal outputting unit configured to, upon receipt of the pulse signal output from the signal comparing unit, output the number counted by the counting unit at the moment.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: September 12, 2017
    Assignee: INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES
    Inventors: Dongmei Li, Qing Luo, Shengfa Liang, Hongzhang Yang, Xiaojing Li, Hao Zhang, Changqing Xie, Ming Liu
  • Patent number: 9562884
    Abstract: A method for manufacturing an NO2 gas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnO2 sensitive film; and bonding the SWCNTs/SnO2 sensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NO2 gas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: February 7, 2017
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Shuang Zhan, Shengfa Liang, Xin Chen, Changqing Xie, Ming Liu
  • Publication number: 20170018424
    Abstract: The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked.
    Type: Application
    Filed: April 17, 2014
    Publication date: January 19, 2017
    Applicant: Institute of Microelectronics, Chinese Academy of
    Inventors: Dongmei Li, Lei Zhou, Shengfa Liang, Xiaojing Li, Hao Zhang, Changqing Xie, Ming Liu
  • Patent number: 9455741
    Abstract: A method for collecting a signal with a frequency lower than a Nyquist frequency includes, by a data transmitting end, selecting a suitable transformation base matrix for an input signal, deriving a sparse representation of the signal using the transformation base matrix to determine a sparsity of the signal, calculating a number M of compressive sampling operations according to the sparsity, sampling the signal with fNYQ/M using M channels, and integrating sampling values of each channel to obtain M measurement values. A reconstruction end reconstructs an original signal by solving optimization problems. Based on theory, compressive sampling can be performed on a sparse signal or a signal represented in a sparse manner with a frequency much lower than the Nyquist frequency, overcoming restrictions of the typical Nyquist sampling theorem. The method can be implemented simply and decrease pressure on data collection, storage, transmission and processing.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: September 27, 2016
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Xiaojing Li, Shengfa Liang, Hao Zhang, Qing Luo, Changqing Xie, Ming Liu
  • Patent number: 9418843
    Abstract: The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt.
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: August 16, 2016
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Xin Chen, Shengfa Liang, Jiebin Niu, Peiwen Zhang, Yu Liu, Xiaojing Li, Shuang Zhan, Hao Zhang, Qing Luo, Changqing Xie, Ming Liu
  • Publication number: 20160123943
    Abstract: A gas recognition method based on a compressive sensing theory. The method comprises: collecting compressed data in an under-sampling manner; performing a reconstruction on the collected compressed data to obtain reconstructed data; training a back-propagation neural network by using the reconstructed data and storing the trained back-propagation neural network; inputting data under test into the trained back-propagation neural network, such that the trained back-propagation neural network performs a recognition on the data under test to realize qualitative recognition of gas. The method solves the problem in transmission and storage of large amount of data and the problem of imprecise recognition in current gas detection, and achieves the object that a precise qualitative recognition is achieved by using a reduced amount of data.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 5, 2016
    Inventors: Dongmei LI, Hao ZHANG, Shengfa LIANG, Qing LUO, Xiaojing LI, Changqing XIE, Ming LIU
  • Publication number: 20160123944
    Abstract: A method for manufacturing an NO2 gas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnO2 sensitive film; and bonding the SWCNTs/SnO2 sensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NO2 gas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 5, 2016
    Inventors: Dongmei LI, Shuang ZHAN, Shengfa LIANG, Xin CHEN, Changqing XIE, Ming LIU
  • Publication number: 20160079969
    Abstract: A sampler adapted to a one-dimension slow-varying signal, including: a signal preprocessing unit configured to preprocess an input signal; a slope-controllable sawtooth wave signal generating unit configured to generate a slope-controllable sawtooth wave signal and perform zero-resetting; a signal comparing unit configured to compare the preprocessed input signal from the signal preprocessing unit with the sawtooth wave signal and to output a pulse signal to the generating unit and a signal outputting unit when the preprocessed input signal is equal to the sawtooth wave signal; a counting unit configured to count a number of clock signals while the sawtooth wave signal generating unit is generating the sawtooth wave signal and to transmit the counted number to the signal outputting unit; the signal outputting unit configured to, upon receipt of the pulse signal output from the signal comparing unit, output the number counted by the counting unit at the moment.
    Type: Application
    Filed: July 15, 2013
    Publication date: March 17, 2016
    Inventors: Dongmei LI, Qing LUO, Shengfa LIANG, Hongzhang YANG, Xiaojing LI, Hao ZHANG, Changqing XIE, Ming LIU
  • Publication number: 20150357191
    Abstract: The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt.
    Type: Application
    Filed: January 17, 2013
    Publication date: December 10, 2015
    Inventors: Dongmei Li, Xin Chen, Shengfa Liang, Jiebin Niu, Peiwen Zhang, Yu Liu, Xiaojing Li, Shuang Zhan, Hao Zhang, Qing Luo, Changqing Xie, Ming Liu
  • Publication number: 20150326246
    Abstract: A method for collecting a signal with a frequency lower than a Nyquist frequency includes, by a data transmitting end, selecting a suitable transformation base matrix for an input signal, deriving a sparse representation of the signal using the transformation base matrix to determine a sparsity of the signal, calculating a number M of compressive sampling operations according to the sparsity, sampling the signal with fNYQ/M using M channels, and integrating sampling values of each channel to obtain M measurement values. A reconstruction end reconstructs an original signal by solving optimization problems. Based on theory, compressive sampling can be performed on a sparse signal or a signal represented in a sparse manner with a frequency much lower than the Nyquist frequency, overcoming restrictions of the typical Nyquist sampling theorem. The method can be implemented simply and decrease pressure on data collection, storage, transmission and processing.
    Type: Application
    Filed: July 22, 2015
    Publication date: November 12, 2015
    Inventors: Dongmei LI, Xiaojing LI, Shengfa LIANG, Hao ZHANG, Qing LUO, Changqing XIE, Ming LIU
  • Publication number: 20150325437
    Abstract: The present disclosure provides a method for preparing compound semiconductor sensitive film based on a displacement reaction-thermal oxidation method, the method comprising: growing a layer of Zn on a high temperature-resistant substrate; submerging the substrate on which the layer of Zn has been grown into ionic solution of soluble salt of Cu, such that Cu ions in the solution are displaced so as to separate Cu nano-particles out on a surface of the layer of Zn; and performing a thermal oxidation process on the layer of Zn to whose surface Cu nano-particles are adhered, such that the Cu nano-particles are oxidized into CuO nano-particles, so as to obtain a ZnO gas sensitive film that is doped with CuO nano-particles. The above preparing method has the following advantages: good filming quality, simplified preparation process, low cost and easy to control.
    Type: Application
    Filed: July 16, 2015
    Publication date: November 12, 2015
    Inventors: Dongmei LI, Xin CHEN, Shengfa LIANG, Shuang ZHAN, Peiwen ZHANG, Changqing XIE, Ming LIU