Abstract: A leakage compensation dynamic register, a data operation unit, a chip, a hash board, and a computing apparatus. The leakage compensation dynamic register comprises: an input terminal, an output terminal, a clock signal terminal, and an analog switch unit; a data latch unit for latching the data under control of the clock signal; and an output drive unit for inverting and outputting the data received from the data latch unit, the analog switch unit, the data latch unit, and the output drive unit being sequentially connected in series between the input terminal and the output terminal, and the analog switch unit and the data latch unit having a node therebetween, wherein the leakage compensation dynamic register further comprises a leakage compensation unit electrically connected between the node and the output terminal.

Abstract: Provided are a transistor with low contact resistivity and a manufacturing method therefor. The transistor includes a substrate, a buffer layer, a channel layer and a barrier layer sequentially stacked, an ion implantation region is formed in a source region and a drain region of the barrier layer, and grooves arranged at intervals are formed in the ion implantation region. Ohmic metal is deposited on a surface of the ion implantation region and in each groove, and the ohmic metal is in contact with a bottom and a side wall of each groove. In this solution, the ohmic metal can be not only in contact with the surface of the ion implantation region, but also in contact with the side wall of each of the grooves, thereby increasing a contact area between the ohmic metal and the semiconductor, and thus reducing the ohmic contact resistivity.

Abstract: An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the source electrode and the drain electrode. The comb structure includes a comb stem portion and a plurality of comb tooth portions. The comb tooth portions are spaced apart from each other in a gate width direction. The comb stem portion is disposed on the barrier layer. Distances between the comb tooth portions in the gate width direction are unequal and irregular. The comb tooth portions penetrate into the barrier layer to equal depths, and the depths are no smaller than half of a thickness of the barrier layer. A method for making the HEMT device is also provided.

Abstract: A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.

Abstract: A microwave transistor has a patterned region between a source and a drain on a barrier layer. Within the patterned region, the surface of the barrier layer partially recessed downwards in the thickness direction to form a plurality of grooves. A gate covers the patterned region. The length of the gate is greater than the lengths of the grooves in the length direction of the gate, so as to completely cover the grooves. In one aspect, by arranging the grooves, the gate control capability of a component is improved and the short-channel effect is suppressed; in another aspect, an original heterostructure below the gate is preserved; in this way, the reduction of the conductive capability due to the reduction of the two-dimensional electron gas density is avoided; and accordingly the current output capability of the component is ensured while the short-channel effect is suppressed.

Abstract: A method of forming an ohmic contact for a gallium nitride-based compound semiconductor device includes the steps of: forming a metal layered structure including a diffusion barrier layer, an aluminum layer and a metallic unit which are sequentially disposed on a GaN-based epitaxial structure; subjecting the metal layered structure to an oxidation treatment in oxygen atmosphere at 350° C. to 650° C. to obtain the oxidized metal layered structure including an aluminum oxide layer; and subjecting the oxidized metal layered structure and the GaN-based epitaxial structure to an alloying treatment in nitrogen atmosphere to form the ohmic contact therebetween. A GaN-based compound semiconductor device is also disclosed.

Abstract: A microwave transistor has a patterned region between a source and a drain on a barrier layer. Within the patterned region, the surface of the barrier layer partially recessed downwards in the thickness direction to form a plurality of grooves. A gate covers the patterned region. The length of the gate is greater than the lengths of the grooves in the length direction of the gate, so as to completely cover the grooves. In one aspect, by arranging the grooves, the gate control capability of a component is improved and the short-channel effect is suppressed; in another aspect, an original heterostructure below the gate is preserved; in this way, the reduction of the conductive capability due to the reduction of the two-dimensional electron gas density is avoided; and accordingly the current output capability of the component is ensured while the short-channel effect is suppressed.