Abstract: Disclosed herein are light sources (e.g., micro-LEDs and ?OLEDs), display electronics, and tiled display panels for high luminance, high resolution display panels used in near-eye display systems. Techniques for three-dimensional integration of multi-color LEDs, micro-LED surface loss reduction using band engineered sidewall passivation structures, micro-LED heat spreading materials and structures, and micro-LED light extraction efficiency improvement using etched outwardly tilted sidewall minors are described. Techniques for drive circuit supply voltage tracking and compensation, dynamic burn-in compensation using interpolation of compensation parameters, and digital misalignment calibration of tiled display panels are also described.

Abstract: Described are LED devices and corresponding manufacturing techniques. In some embodiments, an LED device includes a first doped semiconductor layer, a second doped semiconductor layer having an opposite doping, and a two-dimensional (2D) array of light emitting cells. Each light emitting cell corresponds to a mesa of an individual pixel and includes at least one quantum well. The 2D array is located between the first doped semiconductor layer and the second doped semiconductor layer. The LED device further includes a flattening layer between the first doped semiconductor layer and the 2D array. The flattening layer comprises an undoped quantum barrier (QB) layer that completely covers sidewalls of each light emitting cell in the 2D array. The undoped QB layer quantum mechanically isolates the light emitting cells from each other. The flattening or undoped QB layer may also protect the light emitting cells against etch-induced defects during a mesa pixelation process.

Abstract: A micro-light emitting diode device includes a backplane that includes drive circuits and a first bonding layer, and an array of micro-LEDs that includes an array of semiconductor mesa structures and a second bonding layer. The first bonding layer includes a first dielectric layer, and first metal interconnects that are at least partially in the first dielectric layer and electrically connected to the drive circuits. The second bonding layer includes a second dielectric layer, and second metal interconnects that are at least partially in the second dielectric layer and electrically connected to the array of semiconductor mesa structures. The first bonding layer is bonded to the second bonding layer. At least one of the first dielectric layer or the second dielectric layer includes a first dielectric material characterized by a thermal conductivity greater than 50 W/(m·K) at room temperature, such as AlN.

Abstract: A device includes an array of light sources (e.g., micro-LEDs, micro-RCLEDs, micro-laser: micro-SLEDs, or micro-VCSELs), a dielectric layer on the array of light sources, and a set of metal bonding pads (e.g., copper bonding pads) in the dielectric layer. Each metal bonding pad of the set of metal bonding pads is electrically connected to a respective light source of the array of light sources. Each metal bonding pad of the set of metal bonding pads includes a first portion at a bonding surface and characterized by a first lateral cross-sectional area, and a second portion away from the bonding surface and characterized by a second lateral cross-sectional area larger than two times of the first lateral cross-sectional area. The device can be bonded to a backplane that includes a drive circuit through a low annealing temperature hybrid bonding.

Abstract: An apparatus and heat transfer system, the apparatus comprising: a substrate; a plurality of nucleation sites provided on the substrate; a nanostructured surface surrounding the nucleation sites arranged to enable coalescence induced droplet jumping; wherein both the plurality of nucleation sites and the nanostructured surface are hydrophobic.

Abstract: An apparatus and heat transfer system, the apparatus comprising: a substrate; a plurality of nucleation sites provided on the substrate; a nanostructured surface surrounding the nucleation sites arranged to enable coalescence induced droplet jumping; wherein both the plurality of nucleation sites and the nanostructured surface are hydrophobic.

Abstract: A method and process system of comprehensively utilizing high-temperature slag balls exiting a rotary kiln in a kiln process for producing phosphoric acid, comprising a rotary kiln, a cooling device and a dryer for composite green pellets in a kiln process for producing phosphoric acid, wherein the cooling device comprises at least two cooling stages; the high-temperature slag balls are first conveyed to the cooling device, then the cooling device carries slag balls successively to multiple cooling stages by the movement of a trolley, each cooling stage introduces cold air for cooling, a part of the hot air after cooling is sent to the cavity of the rotary kiln, and the other part thereof is sent to the dryer for composite green pellets in the kiln process for producing phosphoric acid for drying.

Abstract: Intermediates used in the synthesis of Eribulin and methods for preparing the intermediates are described. For example, a compound of formula IV and a method for preparing the compound are described, wherein R1 is a hydroxyl protecting group, preferably a (C1-10 alkyl group or aryl group)3silyl group, and more preferably tert-butyldiphenylsilyl (TBDPS); and R2 is a hydroxyl protecting group, preferably a benzyl group or (C1-10 alkyl group or aryl group)3silyl group, and more preferably a benzyl group or tert-butyldimethylsilyl (TBS). A method for preparing Eribulin using the intermediates is also provided. The method has the advantages of moderate reaction conditions, is simple to execute and low cost, and is thus suitable for mass production.

Abstract: A method and process system of comprehensively utilizing high-temperature slag balls exiting a rotary kiln in a kiln process for producing phosphoric acid, comprising a rotary kiln, a cooling device and a dryer for composite green pellets in a kiln process for producing phosphoric acid, wherein the cooling device comprises at least two cooling stages; the high-temperature slag balls are first conveyed to the cooling device, then the cooling device carries slag balls successively to multiple cooling stages by the movement of a trolley, each cooling stage introduces cold air for cooling, a part of the hot air after cooling is sent to the cavity of the rotary kiln, and the other part thereof is sent to the dryer for composite green pellets in the kiln process for producing phosphoric acid for drying.