Abstract: The present disclosure discloses a resistive random access memory, and the resistive random access memory includes a lower electrode layer, a ferroelectric material layer, and an upper electrode layer arranged in sequence from bottom to top, wherein the ferroelectric material layer includes a doped HfO2 ferroelectric thin film.

Abstract: A method and system processes reference signals (115) for an uplink channel (103) between a transmitter, such as user equipment, and a receiver such as a base station, in a wireless communication network. A sequence of symbols to be transmitted is converted to a sequence of sub frames. The sequence of sub frames is grouped into groups of sub frames. Each sub frames includes at least two time-adjacent sub frames, and reference signals are inserted in a subset of the sub frames.

Abstract: A method and system processes reference signals (115) for an uplink channel (103) between a transmitter, such as user equipment, and a receiver such as a base station, in a wireless communication network. A sequence of symbols to be transmitted is converted to a sequence of sub frames. The sequence of sub frames is grouped into groups of sub frames. Each sub frames includes at least two time-adjacent sub frames, and reference signals are inserted in a subset of the sub frames.

Abstract: Handover procedures and a collection of new handover MAC management messages are provided for a wireless mobile multi-bop relay (MMR) network. The types of handovers supported include macro diversity handover (MDHO) and fast access station switching (FASS). The handover procedures for these two types of handover and the MAC messages are described for nine main classes of network topologies. The nine classes of topology are further classified into to main categories, namely, intra multi-hop base station (MR-BS), when and where the handover is in the MMR cell, and inter MR-BS handover, when and where the handover is between two different MMR cells.