Patents by Inventor Shengling DENG
Shengling DENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240014261Abstract: In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include forming at least one dielectric region in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: ApplicationFiled: September 19, 2023Publication date: January 11, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
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Patent number: 11776997Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: GrantFiled: August 27, 2021Date of Patent: October 3, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Dean E. Probst, Zia Hossain
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Publication number: 20210391422Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
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Patent number: 11133381Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: GrantFiled: April 23, 2018Date of Patent: September 28, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Dean E. Probst, Zia Hossain
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Patent number: 11004839Abstract: The present embodiments relate to an apparatus and method of integrating a semiconductor cell in a non-active area of a MOSFET on a semiconductor substrate. An active area of the MOSFET may include a regular MOSFET cell. The semiconductor cell which can have various structures is configured to function as trench MOS barrier Schottky (TMBS) diode. Depending on its structure the TMBS diode may be integrated in a termination region or a shield tie region or a gate finger neighboring region in the non-active area. The integrated TMBS diode as such can limit the body diode conduction and improve the conduction and switching efficiency in a circuit. Additionally, an integrated TMBS diode may improve the softness of reverse recovery of the MOSFET, reduce drain to source voltage overshoot and ringing due to softer recovery and/or shield bounce without wasting any active area of the semiconductor die of the MOSFET.Type: GrantFiled: August 12, 2019Date of Patent: May 11, 2021Assignee: Renesas Electronics America Inc.Inventors: Shengling Deng, Patrick Shea
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Patent number: 10861965Abstract: The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell.Type: GrantFiled: April 26, 2019Date of Patent: December 8, 2020Assignee: Renesas Electronics America Inc.Inventor: Shengling Deng
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Publication number: 20200020798Abstract: The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell.Type: ApplicationFiled: April 26, 2019Publication date: January 16, 2020Applicant: Renesas Electronics America Inc.Inventor: Shengling DENG
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Publication number: 20190326392Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: ApplicationFiled: April 23, 2018Publication date: October 24, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
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Patent number: 9842925Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, the junction blocking region having a lower doping concentration. The junction blocking region extends between a pair of trench structures in cross-sectional view. The trench structures are provided in the semiconductor region and include at least one insulated electrode. In some embodiments, the semiconductor device further includes a first doped region disposed between the pair of trench structures. The semiconductor device may further include one or more features configured to improve operating performance. The features include a localized doped region adjoining a lower surface of a first doped region and spaced apart from the trench structure, a notch disposed proximate to the lower surface of the first doped region, and/or the at least one insulated electrode configured to have a wide portion adjoining a narrow portion.Type: GrantFiled: October 25, 2016Date of Patent: December 12, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Zia Hossain
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Publication number: 20170040447Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, the junction blocking region having a lower doping concentration. The junction blocking region extends between a pair of trench structures in cross-sectional view. The trench structures are provided in the semiconductor region and include at least one insulated electrode. In some embodiments, the semiconductor device further includes a first doped region disposed between the pair of trench structures. The semiconductor device may further include one or more features configured to improve operating performance The features include a localized doped region adjoining a lower surface of a first doped region and spaced apart from the trench structure, a notch disposed proximate to the lower surface of the first doped region, and/or the at least one insulated electrode configured to have a wide portion adjoining a narrow portion.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Zia HOSSAIN
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Patent number: 9530883Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A trench structure having an insulated shield electrode and an insulated gate electrode is provided in the semiconductor region. The semiconductor device further includes one or more features configured to improve operating performance. The features include terminating the trench structure in the junction blocking region, providing a localized doped region adjoining a lower surface of a body region and spaced apart from the trench structure, disposing a notch proximate to the lower surface of the body region, and/or configuring the insulated shield electrode to have a wide portion adjoining a narrow portion.Type: GrantFiled: January 11, 2016Date of Patent: December 27, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Zia Hossain
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Publication number: 20160126348Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A trench structure having an insulated shield electrode and an insulated gate electrode is provided in the semiconductor region. The semiconductor device further includes one or more features configured to improve operating performance. The features include terminating the trench structure in the junction blocking region, providing a localized doped region adjoining a lower surface of a body region and spaced apart from the trench structure, disposing a notch proximate to the lower surface of the body region, and/or configuring the insulated shield electrode to have a wide portion adjoining a narrow portion.Type: ApplicationFiled: January 11, 2016Publication date: May 5, 2016Applicant: Semiconductor Components Industries, LLCInventors: Shengling DENG, Zia HOSSAIN
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Patent number: 9269779Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A trench structure having an insulated shield electrode and an insulated gate electrode is provided in the semiconductor region. The semiconductor device further includes one or more features configured to improve operating performance. The features include terminating the trench structure in the junction blocking region, providing a localized doped region adjoining a lower surface of a body region and spaced apart from the trench structure, disposing a notch proximate to the lower surface of the body region, and/or configuring the insulated shield electrode to have a wide portion adjoining a narrow portion.Type: GrantFiled: July 21, 2014Date of Patent: February 23, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Zia Hossain
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Publication number: 20160020288Abstract: A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A trench structure having an insulated shield electrode and an insulated gate electrode is provided in the semiconductor region. The semiconductor device further includes one or more features configured to improve operating performance. The features include terminating the trench structure in the junction blocking region, providing a localized doped region adjoining a lower surface of a body region and spaced apart from the trench structure, disposing a notch proximate to the lower surface of the body region, and/or configuring the insulated shield electrode to have a wide portion adjoining a narrow portion.Type: ApplicationFiled: July 21, 2014Publication date: January 21, 2016Inventors: Shengling DENG, Zia HOSSAIN