Patents by Inventor Sheng-pei Chen

Sheng-pei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11915977
    Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih Pei Chou, Chia-Chieh Lin
  • Patent number: 9162222
    Abstract: The present disclosure relates to a surface structure control and preparation process for a metal nanocatalyst involving a metal nanocatalyst. The present disclosure provides a surface structure control and continuous preparation system for a metal nanocatalyst, a metal nanocatalyst having an open surface structure and high surface energy, and a surface structure control and a preparation process thereof. The system is provided with a nucleation electrolytic cell, a distribution valve, at least two growth electrolytic cells, with two ends of the distribution valve being connected to an output port of the nucleation electrolytic cell and to input port of all the growth electrolytic cells, respectively. The metal nanocatalyst having an open surface structure is a single metal nanoscale crystal and has a high density of terrace atoms or active sites on the surface thereof.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: October 20, 2015
    Assignee: XIAMEN UNIVERSITY
    Inventors: Shi-gang Sun, Rui Huang, Sheng-pei Chen
  • Publication number: 20130184146
    Abstract: The present disclosure relates to a surface structure control and preparation process for a metal nanocatalyst involving a metal nanocatalyst. The present disclosure provides a surface structure control and continuous preparation system for a metal nanocatalyst, a metal nanocatalyst having an open surface structure and high surface energy, and a surface structure control and a preparation process thereof. The system is provided with a nucleation electrolytic cell, a distribution valve, at least two growth electrolytic cells, with two ends of the distribution valve being connected to an output port of the nucleation electrolytic cell and to input port of all the growth electrolytic cells, respectively. The metal nanocatalyst having an open surface structure is a single metal nanoscale crystal and has a high density of terrace atoms or active sites on the surface thereof.
    Type: Application
    Filed: June 13, 2011
    Publication date: July 18, 2013
    Applicant: XIAMEN UNIVERSITY
    Inventors: Shi-gang Sun, Rui Huang, Sheng-pei Chen