Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12?x?16, 40?y?43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: A thermoelectric material includes a filled skutterudite crystal structure having the formula GyM4X12, where i) G includes at least two rare earth elements and an alkaline earth element, ii) M is cobalt, rhodium, or iridium, and iii) X is antimony, phosphorus, or arsenic. The subscript “y” refers to a crystal structure filling fraction ranging from about 0.001 to about 0.5.

Abstract: One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including GyM4X12, wherein G is at least two elements. The material may include n-type or p-type doping.

Abstract: A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

Abstract: A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.