Patents by Inventor Shengqiang Zhou

Shengqiang Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forward simulation-based irregular seismic data acquisition method
    Patent number: 11933928
    Abstract: An irregular seismic data collection method is based on forward modeling. The method includes: fully collecting geological information of a work area to build a geological model, determining arrangement parameters of receiver points and shot points for regular high-density collection and irregular sparse collection, performing irregular optimization design on positions of the shot points based on forward modeling, performing irregular optimization design on positions of the receiver points based on forward modeling, and outputting a preferred irregular sparse observation system.
    Type: Grant
    Filed: March 23, 2023
    Date of Patent: March 19, 2024
    Assignee: Institute of Geology and Geophysics, Chinese Academy of Sciences
    Inventors: Shengqiang Mu, Shoudong Huo, Guoxu Shu, Xuhui Zhou, Jiaru Zou, Liang Huang
  • Integrated non-volatile memory elements, design and use
    Patent number: 9520445
    Abstract: Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: December 13, 2016
    Assignee: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E. V.
    Inventors: Heidemarie Schmidt, Yao Shuai, Shengqiang Zhou, Ilona Skorupa, Xin Ou, Nan Du, Christian Mayr, Wenbo Luo
  • INTEGRATED NON-VOLATILE MEMORY ELEMENTS, DESIGN AND USE
    Publication number: 20140312400
    Abstract: Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.
    Type: Application
    Filed: July 12, 2012
    Publication date: October 23, 2014
    Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E. V.
    Inventors: Heidemarie Schmidt, Yao Shuai, Shengqiang Zhou, Ilona Skorupa, Xin Ou, Nan Du, Christian Mayr, Wenbo Luo