Abstract: A capacitor includes a first terminal, a second terminal, a first capacitor, and a second capacitor. The first capacitor includes at least two first conductors arranged in a first direction, where each two adjacent first conductors in the at least two first conductors are separated by a first dielectric, a part of the at least two first conductors is electrically coupled to the first terminal, and the other part of the at least two first conductors is electrically coupled to the second terminal. The second capacitor includes at least two second conductors arranged in a second direction, where each two adjacent second conductors in the at least two second conductors are separated by a second dielectric, a part of the at least two second conductors is electrically coupled to the first terminal, and the other part of the at least two second conductors is electrically coupled to the second terminal.

Abstract: A manufacture method for IC process with top and top-1 metal layers thickened and stacked inductor manufactured by this method is represented in this invention. This method includes: with multi metal layers, and the thickness of top and top-1 metal layers are more than 2.8 um. Thickened top and top-1 metal layers can reduce the resistance of top and top-1 metal layers, so can increase the Q factor of inductor.