Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

Abstract: An ion beam scanning assembly includes a set of scanning electrodes defining a gap to accept an ion beam and scan the ion beam in a first plane, and a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the pair of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane.

Abstract: A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam.

Abstract: An apparatus to generate negative hydrogen ions includes an ion source operative to generate positive hydrogen ions, a first component to adjust positive molecular hydrogen ion species in the ion source, a second component to adjust extraction voltage for extraction of the positive molecular hydrogen ions from the ion source, and a charge exchange cell comprising charge exchange species to convert the extracted positive molecular hydrogen ions to negative hydrogen ions. The adjusted extraction voltage is effective to generate an ion energy to maximize negative ion current yield in the charge exchange cell based upon a product of extraction efficiency of the positive molecular hydrogen ions and a peak in charge exchange efficiency for converting a species of the positive molecular hydrogen ions to negative hydrogen ions through charge exchange between the extracted hydrogen ions and charge exchange species.

Abstract: A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam.

Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

Abstract: A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer.

Abstract: A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer.

Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.