Abstract: The present disclosure discloses a semiconductor device and a preparation method thereof. The semiconductor device includes: an N+ substrate, a plurality of openings opening toward a back surface formed in the N+ substrate; an N? epitaxial layer formed on the N+ substrate, the N? epitaxial layer including: an active area epitaxial layer including a plurality of P++ area rings and a plurality of groove structures, wherein single groove structure is formed on single P++ area ring; a terminal area epitaxial layer including an N+ field stop ring and a plurality of P+ guard rings; a Schottky contact formed on the active area epitaxial layer, a passivation layer formed on the terminal area epitaxial layer, and ohmic contacts formed on the back surface of the N+ substrate and in the plurality of openings.

Abstract: The present disclosure discloses a semiconductor device and a preparation method thereof. The semiconductor device includes: an N+ substrate, a plurality of openings opening toward a back surface formed in the N+ substrate; an N? epitaxial layer formed on the N+ substrate, the N? epitaxial layer including: an active area epitaxial layer including a plurality of P++ area rings and a plurality of groove structures, wherein single groove structure is formed on single P++ area ring; a terminal area epitaxial layer including an N+ field stop ring and a plurality of P+ guard rings; a Schottky contact formed on the active area epitaxial layer, a passivation layer formed on the terminal area epitaxial layer, and ohmic contacts formed on the back surface of the N+ substrate and in the plurality of openings.