Abstract: A smart jewelry device to provide smart reminder and social functionalities is disclosed. This smart jewelry device having embedded SOC chip, illumination units, micro vibration motors can be controlled by mobile devices. This smart jewelry device can be configured to flicker or vibrate following a specific pattern as user defined to reminder user a specific event happened in user's smart terminal device. This smart jewelry device provides a new way of data expression, that is, by encoding the data in including but not limited to Morse code, etc., so that the smart jewelry flashes according to the encoded data, and then the user uses the camera to scan the flashing smart jewelry to decode the data to obtain data, a social network system is built based on this data exchange method that can send or receive some interactive information of friends through the cloud server.

Abstract: The invention provides a power semiconductor device and a method of fabricating the same and a cutoff ring. A cutoff ring located at a periphery of an active area of the power semiconductor device is etched forming at least one trench below which an implant area is formed by implanting ions into the trench, and a silicon dioxide dielectric layer covering the trench and a surface of the active area, are formed. Since the ions are implanted into the trench formed by etching the cutoff ring to thereby increase a depth of the implanted ions and a density of the cutoff ring, a width of the cutoff ring can be shortened to thereby address the technical problem of a considerable area of a chip occupied by the cutoff ring and improve a utilization ratio of the area of the chip so as to lower a cost of fabricating the chip.

Abstract: The invention provides a power semiconductor device and a method of fabricating the same and a cutoff ring. A cutoff ring located at a periphery of an active area of the power semiconductor device is etched forming at least one trench below which an implant area is formed by implanting ions into the trench, and a silicon dioxide dielectric layer covering the trench and a surface of the active area, are formed. Since the ions are implanted into the trench formed by etching the cutoff ring to thereby increase a depth of the implanted ions and a density of the cutoff ring, a width of the cutoff ring can be shortened to thereby address the technical problem of a considerable area of a chip occupied by the cutoff ring and improve a utilization ratio of the area of the chip so as to lower a cost of fabricating the chip.