Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: A low temperature, high growth rate plasma enhanced chemical vapor deposition process is demonstrated for ceramic coatings on metal, alloy and ceramic substrates. The deposition process is carried out at low temperatures (<350-degC.) to prevent the bulk substrate properties from being adversely affected. The substrates are treated with gas surface hardening processes before deposition. Bonding strength (adhesion) between the coating and the substrate is improved by combining surface heat treating processes with the coating processes. Hard ceramic-solid lubricant composite coatings are used for fuel injector components, hydraulic valve components, and other wear parts. Metal-releasing agents are used to improve deposition efficiency. Electron cyclotron resonance mechanism and electromagnetic radiation are used to improve bonding strength, growth rate, coating uniformity, film smoothness and other film qualities.