Abstract: A method and device for depositing a semiconductor film. The method includes: a) carrying a semiconductor material by a carrier gas to a crucible installed in a vacuum deposition chamber via a passage; and b) heating the crucible to sublimate the semiconductor material to be vapor and depositing the vapor on a substrate. The device includes a semiconductor material feeding device, a passage, a vacuum deposition chamber, a crucible installed in the vacuum deposition chamber, and a substrate located above the crucible. The semiconductor material feeding device and the crucible are connected via the passage. The semiconductor material feeding device supplies semiconductor material and carrier gas. The semiconductor material is carried by the carrier gas and enters the crucible via the passage. The method and device can supply semiconductor materials continuously or periodically without opening a vacuum deposition chamber thereof and the uniformity of thin film can be controlled effectively.

Abstract: A method and apparatus for continuously depositing thin film on substrate in vacuum, the method including the following steps: maintaining the degree of vacuum in the vacuum deposition chamber by disposing at least one inlet vacuum pre-evacuating chamber at the inlet of the vacuum deposition chamber and disposing at least one outlet vacuum protection chamber at the outlet of the vacuum deposition chamber; connecting each inlet vacuum pre-evacuating chamber, the vacuum deposition chamber and each outlet vacuum protection chamber by a slit; adjusting the transportation speed of the substrate to shorten the distance between two adjacent substrates before arriving at the deposition device and to enlarge the distance between two adjacent substrates after the substrate left the vacuum deposition chamber, thereby realizing the continuous film deposition process and improving significantly the efficiency of utilizing raw materials.