Abstract: Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 ?S, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 ?S, prior to or while exposing the same to the UV-radiation.

Abstract: Methods of lithographic patterning to form interconnect structures for a chip. A hardmask layer is formed on a dielectric layer. A sacrificial layer is formed on the hardmask layer. First opening and second openings are formed in the sacrificial layer that extend through the sacrificial layer to the hardmask layer. A resist layer is formed on the sacrificial layer. An opening is formed in the resist layer that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer. The resist layer is comprised of a metal oxide resist material that is removable selective to the hardmask layer.

Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

Abstract: Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation.

Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

Abstract: The application describes several methods and an apparatus for treatment of at least partial areas of a substrate. In said methods, at least one liquid is applied to at least one partial area of the substrate and electromagnetic radiation is introduced into this liquid, in order to achieve a desired effect in accordance with the respective method. In one method, radicals are generated in the liquid by means of UV radiation prior to application of the liquid, wherein generation of the radicals occurs directly before applying the liquid to the substrate, such that at least a portion of the radicals reaches the substrate.

Abstract: The disclosure is directed to a method for lithographic patterning. The method may include: exposing a photoresist to a radiant energy; developing the photoresist in a first developer, thereby creating an opening within the photoresist including sidewalls having a slant; and developing the photoresist in a second developer immediately after the developing of the photoresist in the first developer, thereby reducing the slant of the sidewalls of the opening. Where the photoresist is a positive tone development (PTD) photoresist, the first developer may include a positive developer, and the second developer may include a negative developer. Where the photoresist is a negative tone development (NTD) photoresist, the first developer may include a negative developer, and the second developer may include a positive developer.

Abstract: A reflective mask with an embedded absorber pattern is provided. The reflective mask may include a low thermal expansion material (LTEM) substrate. A pair of reflective stacks may be included, each reflective stack having a first respective top surface extending from the LTEM substrate to a first extent. A fill stack is between the pair of reflective stacks, the fill stack having a second top surface extending from the LTEM substrate to a second extent, the second extent being below the first extent of the pair of reflective stacks. An extended portion of each of the pair of reflective stacks is above the fill stack thereby forming a recess well between the pair of reflective stacks, the recess well having substantially vertical walls separated by the second top surface of the fill stack. An absorber layer lining the recess well.

Abstract: Methods of lithographic patterning to form interconnect structures for a chip. A hardmask layer is formed on a dielectric layer. A sacrificial layer is formed on the hardmask layer. First opening and second openings are formed in the sacrificial layer that extend through the sacrificial layer to the hardmask layer. A resist layer is formed on the sacrificial layer. An opening is formed in the resist layer that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer. The resist layer is comprised of a metal oxide resist material that is removable selective to the hardmask layer.

Abstract: A method for cleaning substrates in which at least one nozzle arrangement is provided opposite to an exposed surface of a substrate to be cleaned. The nozzle arrangement includes at least two separate nozzles each having a sonic transducer arranged to introduce sonic energy into a liquid media flowing through the respective nozzle towards the surface of the substrate that is to be cleaned in such way that the sonic energy is directed towards the substrate surface. The sonic transducers have different resonant frequencies of the type that at least their respective first and second order harmonics are all different. A liquid media is applied to a surface area of the substrate by flowing liquid media through the at least two separate nozzles of the nozzle arrangement. The nozzles are arranged and positioned with respect to the surface of the substrate such that the media streams of the nozzles at least partially intersect each other prior to reaching the surface of the substrate.

Abstract: The application describes several methods and an apparatus for treatment of a substrate. In those methods, at least one liquid is applied thereto and electromagnetic radiation is generated in the liquid by means of radiation before applying the liquid to the substrate. Electromagnetic radiation is introduced into the film such that at least a portion of the radiation reaches the substrate surface. In another method for changing the surface characteristics of a substrate having an at least partially hydrophobic substrate surface such that at least a portion of said surface gets a hydrophilic surface characteristic, a liquid is applied to at least the partial area of the surface of the substrate, and UV radiation of a predetermined wavelength is guided onto at least the partial area of the surface of said substrate.

Abstract: Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 ?S, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 ?S, prior to or while exposing the same to the UV-radiation.

Abstract: A lithography mask structure is provided, including: a substrate; at least one reflective layer over the substrate; and an absorber film stack over the at least one reflective layer, the absorber film stack including a plurality of first film layers of a first material and at least one second film layer of a second material. The second material is different from the first material, and the second film layer(s) is interleaved with the plurality of first film layers. In one embodiment, the total thickness of the absorber film stack is less than 50 nm. In another embodiment, the reflectivity of the absorber film stack is less than 2% for a pre-defined wavelength of EUV light. In a further embodiment, the second film layer(s) prevents the average crystallite size of the first film layers from exceeding the thickness of the first film layers.

Abstract: A lithography mask structure is provided, including: a substrate; at least one reflective layer over the substrate; and an absorber film stack over the at least one reflective layer, the absorber film stack including a plurality of first film layers of a first material and at least one second film layer of a second material. The second material is different from the first material, and the second film layer(s) is interleaved with the plurality of first film layers. In one embodiment, the total thickness of the absorber film stack is less than 50 nm. In another embodiment, the reflectivity of the absorber film stack is less than 2% for a pre-defined wavelength of EUV light. In a further embodiment, the second film layer(s) prevents the average crystallite size of the first film layers from exceeding the thickness of the first film layers.

Abstract: The application describes several methods and an apparatus for treatment of at least partial areas of a substrate. In said methods, at least one liquid is applied to at least one partial area of the substrate and electromagnetic radiation is introduced into this liquid, in order to achieve a desired effect in accordance with the respective method. In one method, radicals are generated in the liquid by means of UV radiation prior to application of the liquid, wherein generation of the radicals occurs directly before applying the liquid to the substrate, such that at least a portion of the radicals reaches the substrate.