Abstract: Provided are a method and system for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern. The method includes determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system, and then configuring the states of the SLM pixels to match all the diffraction orders that are relevant in the image formation.

Abstract: A method for measuring a wavefront of an optical system. A first step of the method includes directing electromagnetic radiation uniformly at an object plane having a first grating positioned therein. Lines of the first grating comprise a plurality of dots. A second step of the method includes projecting an image of the first grating onto a focal plane having a second grating positioned therein. A third step of the method includes measuring the wavefront of the optical system based on a fringe pattern produced by the second grating.

Abstract: In one configuration of an arrangement according to an embodiment of the invention, a first grating patch on one module is aligned with a first grating patch on another module. In a different configuration of the arrangement, a second grating patch on the one module is aligned with a second grating patch on the other module. The two configurations are not aligned at the same time.

Abstract: Provided are a method and system for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern. The method includes determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system, and then configuring the states of the SLM pixels to match all the diffraction orders that are relevant in the image formation.

Abstract: The present invention provides systems and methods for maskless lithographic printing that compensate for static and/or dynamic misalignments and deformations. In an embodiment, a misalignment of a pattern formed by a spatial light modulator is measuring during printing. Rasterizer input data is generated based on the measured misalignment and passed the rasterizer. The rasterizer generates pattern data, based on the rasterizer input data, that is adjusted to compensate for the measured misalignment. The pattern data generated by the rasterizer is passed to the spatial light modulator and used to form a second pattern, which includes compensation for the measured misalignment. In an embodiment, deformations caused, for example, by a warping a surface of the spatial light modulator are measured and used by the rasterizer to generate pattern data that compensates for the deformations.

Abstract: A wavefront measurement system with a source of electromagnetic radiation and an illumination system that directs the electromagnetic radiation to a spatial light modulator to produce a diffraction pattern. A projection optical system projects an image of the spatial light modulator onto an image plane. A shearing grating is in the image plane. A detector receives a fringe pattern from the image plane. The spatial light modulator can generate a non-linear phase variation across it to scan the diffraction pattern across a pupil of the projection optical system. The spatial light modulator forms a synthetic grating. The spatial light modulator can be a transmissive-type or a reflective-type modulator. Pixels of the spatial light modulator form rulings of a synthetic grating that can have random variations of transmission and/or angular orientation within each ruling.

Abstract: A wavefront measurement system includes a source of electromagnetic radiation. An illumination system delivers the electromagnetic radiation to an object plane. A source of a diffraction pattern is in the object plane. A projection optical system projects the diffraction pattern onto an image plane, which includes a mechanism (e.g., a shearing grating) to introduce the lateral shear. A detector is located optically conjugate with the pupil of the projection optical system, and receives an instant fringe pattern, resulting from the interference between sheared wavefronts, from the image plane. The diffraction pattern is dynamically scanned across a pupil of the projection optical system, and the resulting time-integrated interferogram obtained from the detector is used to measure the wavefront aberration across the entire pupil.

Abstract: A system for calibrating a spatial light modulator array includes an illumination system and a spatial light modulator array that reflects or transmits light from the illumination system. A projection optical system images the spatial light modulator array onto an image plane. A shearing interferometer creates an interference pattern in the image plane. A controller controls modulation of elements of the spatial light modulator array. The shearing interferometer includes a diffraction grating, a prism, a folding mirror or any other arrangement for generating shear. The shearing interferometer can be a stretching shearing interferometer, a lateral shearing interferometer, or a rotational shearing interferometer. The shearing interferometer may include a diffraction grating with a pitch corresponding to a shear of the light by an integer number of elements. The projection optics resolves each element of the spatial light modulator array in the image plane.

Abstract: A method and system as used to calibrate a reflective SLM. The system can include a reflective SLM having an array of pixels (e.g., moving, tilting, rotating, pivoting, etc. pixels) and a projection optical system resolving individual pixels and having an apodized pupil. During a calibration operation, the pixels of the SLM receive varying voltage values to either continuously or incrementally move them through various angles. Light reflecting from each of the pixels during these movements forms individual images for each pixel at each angle. The light passes through the apodized pupil and is received on one or more sections (e.g., pixels) of a detector (e.g., a CCD array). The pupil apodization pattern is selected so that individual pixels remain well resolved and their resolved images have strong sensitivity to the pixel mirror tilt. The light intensity received for each pixel at each angle is correlated to the voltage value received at the pixel to tilt the pixel to that angle.

Abstract: A system for calibrating a spatial light modulator array includes an illumination system and a spatial light modulator array that reflects or transmits light from the illumination system. A projection optical system images the spatial light modulator array onto an image plane. A shearing interferometer creates an interference pattern in the image plane. A controller controls modulation of elements of the spatial light modulator array. The shearing interferometer includes a diffraction grating, a prism, a folding mirror or any other arrangement for generating shear. The shearing interferometer can be a stretching shearing interferometer, a lateral shearing interferometer, or a rotational shearing interferometer. The shearing interferometer may include a diffraction grating with a pitch corresponding to a shear of the light by an integer number of elements. The projection optics resolves each element of the spatial light modulator array in the image plane.

Abstract: A grating includes an absorptive substrate and a plurality of reflective lines on the absorptive substrate. Each reflective line is formed by a plurality of reflective areas. The reflective areas can be arranged in a regular pattern. The reflective areas are between 70 nm and 120 nm in diameter. The reflective areas can be circular. The reflective areas can have a random height distribution.

Abstract: In one configuration of an arrangement according to an embodiment of the invention, a first grating patch on one module is aligned with a first grating patch on another module. In a different configuration of the arrangement, a second grating patch on the one module is aligned with a second grating patch on the other module. The two configurations do not exist at the same time.

Abstract: An apparatus for optimally scanning a surface of one or more semiconductor wafers undergoing a chemical etching process, comprising: (a) means for registering the semiconductor wafers to a wafer retention stage; and (b) means for controlling a spiral pattern movement of a spiral type scan of the surface of the semiconductor wafers by the chemical etching instrument probe, whereby the surface is figured to correspond to a desired thickness.

Abstract: A method for optimally scanning, for example, a surface of one or more silicon-on-insulator (SOI) semiconductor wafers 10 consists of a spiral type scan technique. The spiral type scan can maintain a path pattern 30 that encompasses the surface diameter of a single SOI wafer 10. The spiral type scan can also maintain a path pattern 30 that encompasses the surface diameters of several SOI wafers 10. The path pattern 30 of the spiral type scan does not include any abrupt redirectional changes. Thus, the machinery controlling the path pattern 30 of the spiral type scan does not undergo unnecessary mechanical stresses. Furthermore, when using the spiral type scan in a chemical etching process of one or more SOI wafers 10 and the etch rate of a chemical etching probe 18 is modulated, the mechanical stresses are further reduced and there are minimal depreciative etching problems.