Patents by Inventor Sheron Honarkhah
Sheron Honarkhah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8598632Abstract: An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.Type: GrantFiled: June 22, 2012Date of Patent: December 3, 2013Assignee: Round Rock Research LLCInventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Publication number: 20120256309Abstract: An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.Type: ApplicationFiled: June 22, 2012Publication date: October 11, 2012Inventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi (Jenny) Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Patent number: 8207576Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: GrantFiled: January 31, 2007Date of Patent: June 26, 2012Assignee: Round Rock Research, LLCInventors: Luan Tran, William T Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K Abatchev, Gurtej S Sandhu, D. Mark Durcan
-
Patent number: 8119535Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: GrantFiled: December 11, 2009Date of Patent: February 21, 2012Assignee: Round Rock Research, LLCInventors: Luan Tran, William T Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K Abatchev, Gurtej S Sandhu, D. Mark Durcan
-
Patent number: 8048812Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate.Type: GrantFiled: April 28, 2010Date of Patent: November 1, 2011Assignee: Round Rock Research, LLCInventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Publication number: 20100210111Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate.Type: ApplicationFiled: April 28, 2010Publication date: August 19, 2010Applicant: ROUND ROCK RESEARCH, LLCInventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi (Jenny) Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Patent number: 7718540Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: GrantFiled: February 1, 2007Date of Patent: May 18, 2010Assignee: Round Rock Research, LLCInventors: Luan Tran, William T Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K Abatchev, Gurtej S Sandhu, D. Mark Durcan
-
Publication number: 20100092891Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: ApplicationFiled: December 11, 2009Publication date: April 15, 2010Applicant: Micron Technology, Inc.Inventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Patent number: 7651951Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: GrantFiled: March 1, 2007Date of Patent: January 26, 2010Assignee: Micron Technology, Inc.Inventors: Luan Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Patent number: 7253118Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: GrantFiled: August 29, 2005Date of Patent: August 7, 2007Assignee: Micron Technology, Inc.Inventors: Luan Tran, William T. Rericha, John Lee, Raman Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi (Jenny) Bai, Zhiping Yin, Paul Morgan, Mirzafer K. Abatchev, Gurtej S. Sandhu, D. Mark Durcan
-
Publication number: 20070161251Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: ApplicationFiled: March 1, 2007Publication date: July 12, 2007Applicant: Micron Technology, Inc.Inventors: Luan Tran, William Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer Abatchev, Gurtej Sandhu, D. Durcan
-
Publication number: 20070138526Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: ApplicationFiled: January 31, 2007Publication date: June 21, 2007Applicant: Micron Technology, Inc.Inventors: Luan Tran, William Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi Bai, Zhiping Yin, Paul Morgan, Mirzafer Abatchev, Gurtej Sandhu, D. Durcan
-
Publication number: 20070128856Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: ApplicationFiled: February 1, 2007Publication date: June 7, 2007Applicant: Micron Technology, Inc.Inventors: Luan Tran, William Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi (Jenny) Bai, Zhiping Yin, Paul Morgan, Mirzafer Abatchev, Gurtej Sandhu, D. Durcan
-
Publication number: 20060211260Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.Type: ApplicationFiled: August 29, 2005Publication date: September 21, 2006Inventors: Luan Tran, William Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah, Shuang Meng, Puneet Sharma, Jingyi (Jenny) Bai, Zhiping Yin, Paul Morgan, Mirzafer Abatchev, Gurtej Sandhu, D. Durcan