Abstract: Embodiments of the present disclosure provide a temperature sensor that may be integrated into a memory device along with a 1T1C reference voltage generator to enable the 1T1C reference voltage generator to provide a temperature dependent 1T1C reference voltage to a memory core (e.g., F-RAM memory core) of the memory device. The temperature sensor may detect a temperature of the memory core, and output this information (e.g., as a trim) for use by the 1T1C reference voltage generator in providing a temperature dependent 1T1C reference voltage. In this way, both the P-term and U-term margins of the memory core may be maintained even as a temperature of the memory core increases.

Abstract: Embodiments of the present disclosure provide a temperature sensor that may be integrated into a memory device along with a 1T1C reference voltage generator to enable the 1T1C reference voltage generator to provide a temperature dependent 1T1C reference voltage to a memory core (e.g., F-RAM memory core) of the memory device. The temperature sensor may detect a temperature of the memory core, and output this information (e.g., as a trim) for use by the 1T1C reference voltage generator in providing a temperature dependent 1T1C reference voltage. In this way, both the P-term and U-term margins of the memory core may be maintained even as a temperature of the memory core increases.