Patents by Inventor Sheung Kim

Sheung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070201016
    Abstract: A plasma equipment seasoning method. The seasoning method comprising the steps of measuring the ratio of optical emission intensity of silicon oxide (SiOx)-based chemical species to optical emission intensity of carbon fluoride compound (CFy)-based chemical species present in a process chamber of plasma equipment before operating the plasma equipment to perform a plasma process, determining whether the value of the measured optical emission intensity ratio is within a predetermined range of normal state or not, and, when reaction gas to be used in the plasma process is supplied into the process chamber based on the result of determination such that the value of the measured optical emission intensity ratio is within the predetermined range of normal state, seasoning the interior of the process chamber to change the ratio of components of the reaction gas, and thus, to change the optical emission intensity ratio.
    Type: Application
    Filed: December 21, 2004
    Publication date: August 30, 2007
    Applicant: ADAPTIVE PLASMA TECHNOLOGY CORP.
    Inventors: Yeong Song, Sang Oh, Sheung Kim, Nam Kim
  • Publication number: 20070151947
    Abstract: Disclosed herein is a plasma chamber setting method for generating plasma in a plasma chamber. A plurality of plasma source coils, including a first plasma source coil, a second plasma source coil having an etching rate at the center part thereof higher than that of the first plasma source coil, and a third plasma source coil having an etching rate at the edge part thereof higher than that of the first plasma source coil, are prepared. The first plasma source coil is disposed on the plasma chamber, and a test wafer is etched. The etching rate for each position of the test wafer is analyzed, and first plasma source coil is replaced with the second plasma source coil or the third plasma source coil based on the analysis results.
    Type: Application
    Filed: December 22, 2004
    Publication date: July 5, 2007
    Inventors: Yeong Song, Sang Ryong Oh, Sheung Kim, Nam Kim, Young Oh, Do Hyung Lee