Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.

Abstract: A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and a neighboring active area. The composite spacer is formed on the sidewall of the shallow trench isolation structure, and further comprises a first insulating layer and an L-shape second insulating layer spacer, wherein the first insulating layer is located between the L-shape second insulating layer spacer and the substrate. The tunnel insulating layer is located on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.

Abstract: A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and a neighboring active area. The composite spacer is formed on the sidewall of the shallow trench isolation structure, and further comprises a first insulating layer and an L-shape second insulating layer spacer, wherein the first insulating layer is located between the L-shape second insulating layer spacer and the substrate. The tunnel insulating layer is located on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.

Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.