Abstract: A BI-CMOS circuit is provided wherein an output terminal is coupled between an upper and lower NPN push-pull transistor. This provides high current drive capability along with no d.c. power dissipation. A P-channel device has a source and a drain connected to the collector and base, respectively, of the upper NPN transistor. An N-channel device has a source and drain connected to the base and collector, respectively, of the lower NPN transistor. The gates of the P-channel and N-channel devices are connected to an input terminal and provide a high impedance thereat. Additional N-channel devices are coupled between the bases of the upper and lower NPN transistors and a supply voltage terminal for improving the switching speed of the output signal.

Abstract: A macrocell array is provided wherein a plurality of cells, each having a plurality of semiconductor devices interconnected for providing logic functions, are selectively interconnected to one another and to input/output pads by a plurality of horizontal and vertical routing channels in one or more metallization layers. An on-chip clock generator is provided within one of the cells and comprises a gate means responsive to an input signal and providing a delayed signal. An output means is coupled to the gate means and is responsive to the input signal and the delayed signal for generating a clock pulse. The gate means includes two or more serially connected sets of differentially connected transistors wherein the time between the input signal and the delayed signal is the summation of the propagation delays of the two or more serially connected sets of differentially connected transistors. External override signals allow for control of the clock pulse regardless of the state of the input signal.

Abstract: A macrocell array is provided wherein a plurality of cells, each having a plurality of semiconductor devices interconnected for providing logic functions, are selectively interconnected to one another and to input/output pads by a plurality of horizontal and vertical routing channels in one or more metallization layers. An on-chip diagnostic circuit is provided for diagnosing a plurality of serially connected latches, or flip-flops, in real time. A first logic gate has inputs adapted to receive a data signal and a data enable signal for inputting data into the latches. A second logic gate has inputs adapted to receive a shift-data-in signal and a shift enable signal for shifting the data through the latches. A third logic gate has inputs adapted to receive a hold signal and an output of a first of the plurality of serially connected latches for capturing the states in each of the latches at a given time.

Abstract: A CML compatible EFL type latch with a data input transistor differentially coupled as a current switch to one emitter of a second multi-emitter transistor. The second emitter of the second transistor is differentially coupled as a current switch to a third transistor. The true output of the latch is connected to the collector of the second transistor, and to the base of the third transistor. Second, clamping Schottky barrier disposed between the collector and base of the third transistor. A third current switch responsive to a system clock source is connected between the two current switches to complete the latch circuitry. Utilizing this arrangement, the EFL type latch is connected directly to a combination decoder-multiplexer circuit.