Abstract: A metal oxide semiconductor field effect transistor (MOSFET) and a method of making the same, capable of avoiding the generating of a high horizontal electric field in low concentration source and drain regions. In accordance with the invention, a p-type substrate is patterned to form a channel region of a convex type thereon. At opposite side portions of the channel region, low concentration source and drain regions are formed which is in turn covered with a gate. High concentration source and drain regions are formed in the portions of the substrate disposed outwardly of opposite side portions of the gate and near the surface of the substrate. Electric fields of low concentration source and drain regions can be controlled by the gate, since the regions are connected to the gate, via the gate oxide layer. As a result, it is possible to avoid the generation of a high horizontal electric field in low concentration source and drain regions.