Patents by Inventor Shi-Han SHANN

Shi-Han SHANN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Target control in extreme ultraviolet lithography systems using aberration of reflection image
    Patent number: 11860544
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Ya Cheng, Han-Lung Chang, Shi-Han Shann, Li-Jui Chen, Yen-Shuo Su
  • TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE
    Publication number: 20220283507
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU
  • Target control in extreme ultraviolet lithography systems using aberration of reflection image
    Patent number: 11340531
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: May 24, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Ya Cheng, Han-Lung Chang, Shi-Han Shann, Li-Jui Chen, Yen-Shuo Su
  • TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE
    Publication number: 20220011675
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU