Abstract: A calibration apparatus includes a processor, an alignment device, and an arm. The alignment device captures images in a three-dimensional space, and a tool is arranged on a flange of the arm. The processor records a first matrix of transformation between an end-effector coordinate-system and a robot coordinate-system, and performs a tool calibration procedure according to the images captured by the alignment device for obtaining a second matrix of transformation between a tool coordinate-system and the end-effector coordinate-system. The processor calculates relative position of a tool center point of the tool in the robot coordinate-system based on the first and second matrixes, and controls the TCP to move in the three-dimensional space for performing a positioning procedure so as to regard points in an alignment device coordinate-system as points of the TCP, and calculates the relative positions of points in the alignment device coordinate-system and in the robot coordinate-system.

Abstract: A projection device including a casing, a light source module, an optical engine module and a projection lens is provided. A front cover, a rear cover, a first side cover, a second side cover, an upper cover and a lower cover of the casing surround an accommodating space. The light source module includes a first and a second light sources, and a first and a second light source heat dissipation modules. The lower cover has a first, a second and a third air inlets. The first and the second side covers respectively have a first and a second air outlets. The first and the second light source heat dissipation modules are correspondingly disposed above the first air inlet and correspond to the first air outlet. The second and the third air inlets are respectively disposed below two sides of the projection lens and adjacent to the front cover.

Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A system, method, and/or non-transitory computer readable medium may implement or be configured to implement the following computational operations associated with electrochemical or vapor phase deposition: (a) defining an interface of a substrate where deposition of a deposited material is to occur or is occurring; (b) using a computational model of the deposition to determine a local deposition rate of the deposited material at multiple locations on the interface, where the computational model of the deposition computes the local deposition rate as a function of one or more geometric parameters of the one or more recessed or protruding features; and (c) computationally adjusting the location of the interface to produce an adjusted interface.

Abstract: An electronic circuit adapted to drive a display panel is provided. The electronic circuit includes a touch sensing circuit, a fingerprint sensing circuit and a display driving circuit. The touch sensing circuit senses a touch of a finger and determines a first area corresponding to the touch on the display panel. The fingerprint sensing circuit senses a fingerprint image of the finger corresponding to the first area. The display driving circuit drives pixels of the first area with respective first gray levels and pixels of a second area outside the first area with respective second gray levels. The display driving circuit processes respective third gray levels to obtain the respective first gray levels or the respective second gray levels. The display driving circuit generates gamma voltages corresponding to the respective first gray levels and the respective second gray levels according to a same gamma curve.

Abstract: An electronic circuit adapted to drive a display panel is provided. The display panel includes touch sensors and fingerprint sensors. The electronic circuit includes a touch sensing circuit, a fingerprint sensing circuit and a display driving circuit. The touch sensing circuit senses a touch of a finger and determines a first area corresponding to the touch on the display panel. The fingerprint sensing circuit senses a fingerprint image of the finger corresponding to the first area. The display driving circuit drives pixels of the first area with respective first gray levels and pixels of a second area outside the first area with respective second gray levels. The display driving circuit processes respective third gray levels to obtain the respective second gray levels. The display driving circuit generates gamma voltages corresponding to the respective first gray levels and the respective second gray levels according to the same gamma curve.

Abstract: Systems and methods for performing local Critical Dimension Uniformity (CDU) modeling in a virtual fabrication environment are discussed. More particularly, local CD variance is replicated in the virtual fabrication environment in order to produce a CDU mask that can be used during a virtual fabrication sequence to produce more accurate results reflecting the CD variance of features that occurs in a pattern for a semiconductor device being physically fabricated.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: Systems and methods for performing reflow modeling in a virtual fabrication environment are discussed. More particularly, the virtual fabrication environment may determine metal or material “reflow” or movement during fabrication of a semiconductor device structure. A reflow modeling step with user-specified parameters may be inserted into a process sequence used during fabrication of the semiconductor device structure.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: An electronic circuit adapted to drive a display panel is provided. The display panel includes touch sensors and fingerprint sensors. The electronic circuit includes a touch sensing circuit, a fingerprint sensing circuit and a display driving circuit. The touch sensing circuit senses a touch of a finger and determines a first area corresponding to the touch on the display panel. The fingerprint sensing circuit senses a fingerprint image of the finger corresponding to the first area. The display driving circuit drives pixels of the first area with respective first gray levels and pixels of a second area outside the first area with respective second gray levels. The display driving circuit processes respective third gray levels to obtain the respective second gray levels. The display driving circuit generates gamma voltages corresponding to the respective first gray levels and the respective second gray levels according to the same gamma curve.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: An electronic circuit for driving a panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a touch sensing circuit, a fingerprint sensing circuit and a display driving circuit. The touch sensing circuit senses a touch of a finger and determines a first area corresponding to the touch on the panel. The fingerprint sensing circuit senses a fingerprint image of the finger corresponding to the first area of the panel. The display driving circuit drives pixels over the panel with respective first gray levels during a first phase, and drives pixels of the first area with respective second gray levels and pixels of a second area outside the first area with respective third gray levels during a second phase. The respective second gray levels are higher than the respective first gray levels, and the respective third gray levels are lower than the respective second gray levels.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: An electronic circuit for driving a panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a touch sensing circuit, a fingerprint sensing circuit and a display driving circuit. The touch sensing circuit senses a touch of a finger and determines a first area corresponding to the touch on the panel. The fingerprint sensing circuit senses a fingerprint image of the finger corresponding to the first area of the panel. The display driving circuit drives pixels over the panel with respective first gray levels during a first phase, and drives pixels of the first area with respective second gray levels and pixels of a second area outside the first area with respective third gray levels during a second phase. The respective second gray levels are higher than the respective first gray levels, and the respective third gray levels are lower than the respective second gray levels.

Abstract: An infrared photodetector formed of a MOS tunneling diode is disclosed. The infrared photodetector comprises a conducting layer, a semiconductor layer comprising at least one layer of quantum structure for confining a carrier in a barrier, an insulating layer formed between the conducting layer and the semiconductor layer, and a voltage source connected to the conducting layer and the semiconductor layer for providing a bias voltage to generate a quantum tunneling effect, such that the carrier penetrates through the insulating layer to form a current, wherein when irradiated by an infrared, the carrier in the barrier absorbs the energy of the infrared to jump out of the barrier and is collected by an electrode to form a photocurrent.