Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: A semiconductor device and method of fabricating the device, includes forming a fin-type active pattern that projects above a field insulating layer and forming a dummy gate structure that includes an epitaxial growth prevention layer to suppress nodule formation.