Patents by Inventor Shi-Jiun WANG
Shi-Jiun WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250142985Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.Type: ApplicationFiled: December 24, 2024Publication date: May 1, 2025Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
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Publication number: 20250126929Abstract: A device includes a detector transistor, a sensing pad, a first conductive ring, a second conductive ring, a first transistor, and a second transistor. The sensing pad is over the detector transistor. The first conductive ring is over the sending pad. The second conductive ring is over the first conductive ring. The first transistor has a source/drain region electrically coupled to the first conductive ring. The second transistor has a source/drain region electrically coupled to the second conductive ring.Type: ApplicationFiled: December 20, 2024Publication date: April 17, 2025Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
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Patent number: 12249662Abstract: A device includes a detector, a sensing pad, a ring structure, a control circuit, a first transistor, and a second transistor. The sensing pad is electrically connected to the detector. The ring structure is over the sensing pad and includes an upper conductive ring and a lower conductive ring between the upper conductive ring and the sensing pad. The first transistor interconnects the upper conductive ring and the control circuit. The second transistor interconnects the lower conductive ring and the control circuit.Type: GrantFiled: May 20, 2022Date of Patent: March 11, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin King, Chrong Jung Lin, Burn Jeng Lin, Shi-Jiun Wang
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Patent number: 12211949Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.Type: GrantFiled: October 12, 2023Date of Patent: January 28, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin King, Chrong Jung Lin, Burn Jeng Lin, Shi-Jiun Wang
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Publication number: 20240038921Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.Type: ApplicationFiled: October 12, 2023Publication date: February 1, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
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Publication number: 20230378377Abstract: A device includes a detector, a sensing pad, a ring structure, a control circuit, a first transistor, and a second transistor. The sensing pad is electrically connected to the detector. The ring structure is over the sensing pad and includes an upper conductive ring and a lower conductive ring between the upper conductive ring and the sensing pad. The first transistor interconnects the upper conductive ring and the control circuit. The second transistor interconnects the lower conductive ring and the control circuit.Type: ApplicationFiled: May 20, 2022Publication date: November 23, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
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Patent number: 11824133Abstract: A device includes a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact. The semiconductor fin includes a channel region and source/drain regions on opposite sides of the channel region. The isolation structure laterally surrounds the semiconductor fin. The gate structure is over the channel region of the semiconductor fin. The source/drain structures are respectively over the source/drain regions of the semiconductor fin. The sensing contact is directly on the isolation structure and adjacent to the gate structure. The sensing pad structure is connected to the sensing contact. The reading contact is directly on the isolation structure and adjacent to the gate structure.Type: GrantFiled: February 11, 2022Date of Patent: November 21, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin King, Chrong Jung Lin, Burn Jeng Lin, Shi-Jiun Wang
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Publication number: 20230026707Abstract: A device includes a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact. The semiconductor fin includes a channel region and source/drain regions on opposite sides of the channel region. The isolation structure laterally surrounds the semiconductor fin. The gate structure is over the channel region of the semiconductor fin. The source/drain structures are respectively over the source/drain regions of the semiconductor fin. The sensing contact is directly on the isolation structure and adjacent to the gate structure. The sensing pad structure is connected to the sensing contact. The reading contact is directly on the isolation structure and adjacent to the gate structure.Type: ApplicationFiled: February 11, 2022Publication date: January 26, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG