Abstract: The present invention is related to microelectronic technologies, and discloses specifically a mixed junction source/drain field-effect-transistor and methods of making the same. The field-effect-transistor with mixed junction source/drain comprises a semiconductor substrate, a gate structure, sidewalls, and source and drain regions having mixed junction structures, which are combinations of Schottky and P-N junctions. Compared with Schottky junction field-effect-transistors, the mixed junction source/drain field-effect-transistor described in the present invention has the characteristics of relatively low source/drain leakage. At the same time, this field-effect-transistor has lower source/drain series resistances than that associated with P-N junction field-effect-transistors.

Abstract: The present invention provides a charge trapping non-volatile semiconductor memory device and a method of making the device. The charge trapping non-volatile semiconductor memory device comprises a semiconductor substrate, a source region, a drain region, and, consecutively formed over the semiconductor substrate, a channel insulation layer, a charge trapping layer, a blocking insulation layer, and a gate electrode. The drain region includes a P-N junction, and the source region includes a metal-semiconductor junction formed between the semiconductor substrate and a metal including titanium, cobalt, nickel, platinum or one of their various combinations. The charge trapping non-volatile semiconductor memory device according to the present disclosure has low programming voltage, fast programming speed, low energy consumption, and relatively high device reliability.