Patents by Inventor SHI-LU ZHAN

SHI-LU ZHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering target
    Patent number: 10480061
    Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10?2 ?cm to about 10 ?cm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: November 19, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Shi-Lu Zhan, Xiao-Long Li
  • SPUTTERING TARGET
    Publication number: 20180327896
    Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10?2 ?cm to about 10 ?cm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 15, 2018
    Applicants: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, SHI-LU ZHAN, XIAO-LONG LI
  • Sputtering target and method for making the same
    Patent number: 10077496
    Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: September 18, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Shi-Lu Zhan, Xiao-Long Li
  • SPUTTERING TARGET AND METHOD FOR MAKING THE SAME
    Publication number: 20160326633
    Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.
    Type: Application
    Filed: June 24, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, SHI-LU ZHAN, XIAO-LONG LI