Abstract: The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.

Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.

Abstract: A structure of III-nitride light emitting diode (LED) having spiral electrodes and a manufacturing method thereof. The present invention uses an etching or polishing method to form a spiral-shaped trench in the surface of the epitaxial structure of LED, so that two metal electrodes having opposite electrical properties, formed in following steps, have the spiral-shaped pattern structures in parallel. The structure of III-nitride LED having spiral electrodes formed by the method of the present invention can evenly distribute the injected current between two electrodes having opposite electrical properties, thereby having the advantages of good current-spreading efficiency and the uniform light-emitting area. In addition, the photon ejected to the surface of diode produced with a large angle can be extracted from the side of the trench that is exposed by etching spiral-shaped pattern, so that the extraction efficiency of photon is increased.

Abstract: A structure and manufacturing method of LED is disclosed.

Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.

Abstract: A method for forming a metal bridge in a hetero-junction bipolar transistor. The method includes etching away a portion of the semiconductor layers under a metallic layer so that a device region and a contact pad region on the semiconductor substrate are isolated from each other. The invention not only can produce small area hetero-junction bipolar transistors with ease, the invention can also fabricate large area and small area hetero-junction bipolar transistors at the same time. By clearing away contact pad capacitance, hetero-junction bipolar transistors suitable for high frequency applications can be manufactured with a few simple steps. In addition, the metal bridge of this invention can be fabricated on a semiconductor layer, which can serve as a support for increasing the strength of the metal bridge.

Abstract: A InGaSb/GaSb strained-layer superlattices infrared photodetector in which the light-hole and heavy-hole are dispersed by the stress of the lattice mismatch, making the confined energy of the light hole and that of the heavy hole different. The wave function coupling of 1C-1HH is larger at near zero bias, thus the 1C-1HH is dominant. The wave function coupling of 1C-1LH is increased as reverse bias increases. When the reverse bias is high enough, the 1C-1HH transition becomes dominant. Because the transition energy of 1C-1HH and that of 1C-1LH are different, the modes of photodetector can be modulated by applying voltage.

Abstract: The invention concerns an InAs/GaSb superlattice infrared detector that is prepared on a GaSb or a GaAs substrate by low pressure organometaleic chemical vapor deposition. The thickness of well and barrier modulated in the superlattice is used to control the wavelength of absorption. As the superlattice is sandwiched by the Si-doped InAs layer, the wavelength of absorption is in the 8.about.14 .mu.m range. As the superlattice is sandwiched by the Zn-doped GaSb layer, the wavelength of absorption is in the 3.about.5 .mu.m range.