Patents by Inventor Shi Qi Huang

Shi Qi Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10833042
    Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: November 10, 2020
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
  • Publication number: 20200335450
    Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.
    Type: Application
    Filed: July 8, 2020
    Publication date: October 22, 2020
    Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
  • Patent number: 10811042
    Abstract: A thermally assisted magnetic recording head and a thermally assisted magnetic recording disk drive are disclosed. The thermally assisted magnetic recording head includes a slider body, a laser substrate, a laser and a magnetic head, wherein the laser substrate is provided on the slider body, the laser is provided on the laser substrate, and the magnetic head is provided at a front end of the slider body. The magnetic head includes an optical waveguide facing the laser. The angle between a light incident surface of the optical waveguide and an incident direction of a laser light incident on the optical waveguide is less than 90 degrees. The thermally assisted magnetic recording disk drive includes a plurality of magnetic disks and a magnetic head suspending frame. A front end of the magnetic head suspending frame is provided with the thermally assisted magnetic recording heads mentioned above.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: October 20, 2020
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Ryuji Fujii, Jian Hui Huang, Natsuo Nishijima, Lin Huang, Shi Xiong Chen, Bin Qi, Wen Rong Guo
  • Patent number: 10748851
    Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: August 18, 2020
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
  • Publication number: 20200243455
    Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.
    Type: Application
    Filed: March 4, 2019
    Publication date: July 30, 2020
    Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
  • Publication number: 20200243473
    Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers.
    Type: Application
    Filed: March 4, 2019
    Publication date: July 30, 2020
    Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
  • Publication number: 20200143827
    Abstract: A thermally assisted magnetic recording head and a thermally assisted magnetic recording disk drive are disclosed. The thermally assisted magnetic recording head includes a slider body, a laser substrate, a laser and a magnetic head, wherein the laser substrate is provided on the slider body, the laser is provided on the laser substrate, and the magnetic head is provided at a front end of the slider body. The magnetic head includes an optical waveguide facing the laser. The angle between a light incident surface of the optical waveguide and an incident direction of a laser light incident on the optical waveguide is less than 90 degrees. The thermally assisted magnetic recording disk drive includes a plurality of magnetic disks and a magnetic head suspending frame. A front end of the magnetic head suspending frame is provided with the thermally assisted magnetic recording heads mentioned above.
    Type: Application
    Filed: December 24, 2018
    Publication date: May 7, 2020
    Inventors: Ryuji Fujii, Jian Hui Huang, Natsuo Nishijima, Lin Huang, Shi Xiong Chen, Bin Qi, Wen Rong Guo