Patents by Inventor Shiwei HE

Shiwei HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240380755
    Abstract: Embodiments of this specification provide account registration processing methods and apparatuses. The account registration processing method includes following: A contact method of a target user submitted by a first terminal is received, and an information collection page is returned to the first terminal; an invitation list is generated based on registration information entered based on the information collection page and submitted by the first terminal, and an invitation link generated based on the invitation list is sent to a second terminal based on the contact method; a display configuration parameter of the target user is determined based on the registration information after the invitation link is triggered; and account registration is performed based on the registration information and a registration result is sent to the first terminal if a registration confirmation instruction submitted after the second terminal displays information based on the display configuration parameter is received.
    Type: Application
    Filed: May 7, 2022
    Publication date: November 14, 2024
    Inventors: Xiaocheng GUO, Mingyu JIANG, Ruirui YU, Yue YE, Zhiqiang SUN, Shiwei HE, Xue REN
  • Patent number: 12139698
    Abstract: An Axial Dispersion Bioreactor (ADBR) is designed for the photoautotrophic, mixotrophic or heterotrophic growth and production of microalgae and other microorganisms (bacteria, fungi, etc.) as well as cell cultures of plants, animals, insects and others. The ADBR is equipped with a plate having a plurality of holes that moves longitudinally or axially within the bioreactor to effect superior hydrodynamic and mixing patterns. The ADBR has the advantages of providing a low-shear culture environment, superior liquid mixing, and efficient gas mass transfer.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: November 12, 2024
    Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA
    Inventors: Joel L. Cuello, Yaser Mehdipour, Andres P. Mayol, Shiwei He, Chen-Han Shih, Lawrence Victor Vitug
  • Publication number: 20240355933
    Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof includes a source structure, a drain structure, a gate structure, a bottom dielectric layer, a gate dielectric layer, a channel structure, and a metal nitride layer. The source structure and the drain structure are stacked in a vertical direction, and the gate structure is between the drain structure and the source structure. The bottom dielectric layer is disposed between the drain structure and the source structure. The channel structure is disposed between the drain structure and the source structure and is electrically connected the drain structure and the source structure, and the channel structure is partially disposed in the gate structure. The gate dielectric layer is disposed between the channel structure and the gate structure. The metal nitride layer is disposed between the gate dielectric layer and the gate structure.
    Type: Application
    Filed: August 28, 2023
    Publication date: October 24, 2024
    Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Gang WU, Mingru GE, Guoguo KONG, Shiwei HE, Wangqin Yang, Yongjian YU
  • Publication number: 20240206166
    Abstract: A three-dimensional memory device includes a substrate and a stack structure including alternating conductive layers and dielectric layers disposed on the substrate, and a memory string structure extending vertically through the stack structure. The memory string structure includes a conductive pillar and a storage layer disposed between the conductive pillar and the stack structure and surrounding the conductive pillar. The storage layer includes a plurality of first protruding portions at interfaces between the conductive layers and the dielectric layers.
    Type: Application
    Filed: April 10, 2023
    Publication date: June 20, 2024
    Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Shiwei He, Canfa Dai, Detianyu Diao, Guoguo Kong, Hsien-Shih Chu, Yongjian Yu
  • Publication number: 20240204101
    Abstract: A semiconductor device and a manufacturing method thereof are disclosed in the present invention. The semiconductor device includes a source structure; a gate structure disposed above the source structure; a first opening penetrates through the gate structure in a vertical direction; a semiconductor structure; a gate dielectric layer; an insulation structure; and a void. The semiconductor structure is partially disposed in the first opening, and at least a portion of the gate structure is located at two opposite sides of the semiconductor structure in a horizontal direction. The gate dielectric layer is disposed in the first opening and located between the semiconductor structure and the gate structure. At least a portion of the insulation structure is disposed in the first opening, at least a portion of the semiconductor structure is located between the insulation structure and the gate dielectric layer, and the void is located in the insulation structure.
    Type: Application
    Filed: March 30, 2023
    Publication date: June 20, 2024
    Applicant: FUJIAN JINHUA INTEGRATED CIRCUIT CO., LTD.
    Inventors: GUOGUO KONG, GANG WU, MINGRU GE, SHIWEI HE, HSIEN-SHIH CHU, JUNKUN CHEN
  • Publication number: 20200318052
    Abstract: An Axial Dispersion Bioreactor (ADBR) is designed for the photoautotrophic, mixotrophic or heterotrophic growth and production of microalgae and other microorganisms (bacteria, fungi, etc.) as well as cell cultures of plants, animals, insects and others. The ADBR is equipped with a plate having a plurality of holes that moves longitudinally or axially within the bioreactor to effect superior hydrodynamic and mixing patterns. The ADBR has the advantages of providing a low-shear culture environment, superior liquid mixing, and efficient gas mass transfer.
    Type: Application
    Filed: December 21, 2018
    Publication date: October 8, 2020
    Inventors: Joel L. CUELLO, Yaser MEHDIPOUR, Andres P. MAYOL, Shiwei HE, Chen-Han SHIH