Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain feature on a semiconductor fin structure, a first isolation structure surrounding the semiconductor fin structure, source/drain spacers on the first isolation structure and surrounding a lower portion of the source/drain feature, a dielectric fin structure adjoining and in direct contact with the first isolation structure and one of the source/drain spacers, and an interlayer dielectric layer over the source/drain spacers and the dielectric fin structure and surrounding an upper portion of the source/drain feature.

Abstract: A wire drawing process of a light storage wire includes a feeding step, a mixing step, a first drying step, a hot melt extrusion step, a first cooling step, a shaping/organizing wire step, a hot-temperature remodeling step, a stretching step, a second cooling step, a strand winding/rolling step, and a second drying step.

Abstract: A method for manufacturing a composite fabric includes the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, second drying, and weaving. The composite fabric is composed of multiple first threads and multiple second threads which are woven to the first threads. The first threads and the second threads are respectively reflective threads and glowing threads so that the composite fabric includes both features of light reflection and glowing in dark.

Abstract: The thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes mainly use thermoplastic polyurethane particles which are easily prepared. When fabric made by the threads is attached to objects, the fabric is flat and neat.

Abstract: The adhesive thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes are woven into fabric which has a certain level of stickiness so as to be attached onto objects without using glue and adhesive, and the fabric is flat and neat when it is attached to an object.

Abstract: A wire drawing process of a light storage wire includes a feeding step, a mixing step, a first drying step, a hot melt extrusion step, a first cooling step, a shaping/organizing wire step, a hot-temperature remodeling step, a stretching step, a second cooling step, a strand winding/rolling step, and a second drying step.

Abstract: The thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes mainly use thermoplastic polyurethane particles which are easily prepared. When fabric made by the threads is attached to objects, the fabric is flat and neat.

Abstract: A method for manufacturing a composite fabric includes the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, second drying, and weaving. The composite fabric is composed of multiple first threads and multiple second threads which are woven to the first threads. The first threads and the second threads are respectively reflective threads and glowing threads so that the composite fabric includes both features of light reflection and glowing in dark.

Abstract: The adhesive thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes are woven into fabric which has a certain level of stickiness so as to be attached onto objects without using glue and adhesive, and the fabric is flat and neat when it is attached to an object.

Abstract: A high temperature oxidation-resistant coated steel plate includes a steel base material and a high temperature oxidation-resistant coating. The high temperature oxidation-resistant coating is formed by coating a high temperature oxidation-resistant paint onto the steel base material and baking in an oven. The high temperature oxidation-resistant paint includes a binder and a plurality of micron aluminum flakes. The binder has a three-dimensional molecular structure of Al—O. The micron aluminum flakes has a micron-sized thickness and a length ranging from 5 to 30 ?m inclusive. The disclosure can enhance high temperature oxidation-resistant ability and hot stamping characteristics of the coated steel plate, and makes objects after hot stamping have good spot weldability and coating performance.

Abstract: A method for forming a composite dielectric layer within a microelectronic product provides a first dielectric layer formed over a substrate of a fluorosilicate glass (FSG) dielectric material deposited employing a high density plasma chemical vapor deposition (HDP-CVD) method. The method also provides a second dielectric layer formed over the first dielectric layer and formed of an undoped silicate glass (USG) dielectric material deposited employing a HDP-CVD source radio frequency power only method employing a source radio frequency power of from about 1000 to about 5000 watts absent a bias power. The composite dielectric layer is formed with inhibited cracking.

Abstract: A method for forming a composite dielectric layer within a microelectronic product provides a first dielectric layer formed over a substrate of a fluorosilicate glass (FSG) dielectric material deposited employing a high density plasma chemical vapor deposition (HDP-CVD) method. The method also provides a second dielectric layer formed over the first dielectric layer and formed of an undoped silicate glass (USG) dielectric material deposited employing a HDP-CVD source radio frequency power only method employing a source radio frequency power of from about 1000 to about 5000 watts absent a bias power. The composite dielectric layer is formed with inhibited cracking.

Abstract: Within each of a pair of methods for forming each of a pair of microelectronic fabrications with reduced cracking within each of a pair of silicon oxide dielectric layers there is employed at least one stress reducing layer. The at least one stress reducing layer is formed of a silicon and nitrogen containing dielectric material, such as a silicon nitride dielectric material or a silicon oxynitride dielectric material.

Abstract: Within each of a pair of methods for forming each of a pair of microelectronic fabrications with reduced cracking within each of a pair of silicon oxide dielectric layers there is employed at least one stress reducing layer. The at least one stress reducing layer is formed of a silicon and nitrogen containing dielectric material, such as a silicon nitride dielectric material or a silicon oxynitride dielectric material.