Abstract: Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Abstract: Various embodiments may relate to an electro-optic modulator. The electro-optic modulator may include a waveguide configured to carry optical light along a longitudinal length of the waveguide. The electro-optic modulator may also include a first electrically conductive sub-wavelength grating on a first side of the waveguide, the first electrically conductive sub-wavelength grating including a plurality of fingers extending substantially perpendicular to the longitudinal length of the waveguide. The electro-optic modulator may further include a second electrically conductive sub-wavelength grating on a second side of the waveguide opposite the first side, the second electrically conductive sub-wavelength grating including a plurality of fingers extending substantially perpendicular to the longitudinal length of the waveguide.

Abstract: A method for manufacturing a product in the form of a sheet or a block, including: preparing an initial mixture including one or more stones or a stone-like granular material having a selected particle size and a binder; depositing a layer of the initial mixture having a predetermined thickness onto a surface of a conveyor belt; performing prepressing and finally obtaining a roughly formed material; systematically depositing layers of initial mixtures onto surface of the conveyor belt in parallel, making each layer not superposed in a direction perpendicular to surface of the conveyor belt, but arranged in sequence in a direction of width of the conveyor belt to form a multi-component or composite mixture structure; conveyor belt conveys the multi-component or composite mixture into a rotated container or support member; after discharged from the rotated container or support member, a final mixture is conveyed to perform subsequent pre-compression and hardening.

Abstract: Various embodiments may provide an optical phase array. The optical phase array may include a laser source configured to emit a laser. The optical phase array may further include an integrated photonic network with n stages of optical splitters, the optical splitters being 1 ? 2 optical splitters, each optical splitter of the integrated photonic network having an input, a first output, and a second output. The integrated photonic network may be configured to separate the laser into N outputs. Each output of the N outputs may differ from a neighbouring output of the N outputs by a constant phase difference (??). N may be equal to 2 to the power of n.

Abstract: A production device for manufacturing a product in the form of a sheet or a block, including: an initial agitator (1), a primary conveyor belt (2) and a mixing agitator (3); each of initial agitators (1) is configured with the primary conveyor belt (2), one or more stones or a stone-like granular material having a selected particle size and a binder are initially mixed in the initial agitator (1) and then an initial mixture is obtained; the mixing agitator (3) includes a rotating container for undertaking a material; the initial mixture is conveyed to the mixing agitator (3) through the primary conveyor belt (2); more than one initial agitator and matched primary conveyor belts thereof are disposed around the mixing agitator (3) at intervals.

Abstract: Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Abstract: An interlayer mixing apparatus for texturing man-made stone slabs has a pressing assembly, a coloring component, a stirring assembly, a moving assembly, and a control system. A conveyor belt sequentially conveys a slab to working areas of the pressing assembly, the coloring component, and the stirring assembly which are separately connected to the control system. The pressing assembly presses the slab before the pigment and the slab are stirred, so that the texture boundary on the final product is clearer and more complete. The control system moves the moving assembly to position the stirring assembly according to a texture route, while the stirring assembly performs stirring on a part of the surface of the slab, to stir a pigment layer with a raw material layer on the slab.

Abstract: Various embodiments may provide an optical phase array. The optical phase array may include a laser source configured to emit a laser. The optical phase array may further include an integrated photonic network with n stages of optical splitters, the optical splitters being 1 ? 2 optical splitters, each optical splitter of the integrated photonic network having an input, a first output, and a second output. The integrated photonic network may be configured to separate the laser into N outputs. Each output of the N outputs may differ from a neighbouring output of the N outputs by a constant phase difference (??). N may be equal to 2 to the power of n.

Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Abstract: According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate, a waveguide formed on a surface of the substrate, a first metal layer formed on a first side of the waveguide, wherein a first interface is defined between the waveguide and the first metal layer, and a silicide layer formed on a second side of the waveguide, wherein a second interface is defined between the waveguide and the silicide layer, and wherein the second side is opposite to the first side, and wherein at least one of the first interface and the second interface is at least substantially perpendicular to the surface of the substrate. Various embodiments further provide a method of forming the photodetector.

Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.