Abstract: An exemplary method for testing a video signal generator is provided. The method includes: setting test parameters of the video signal generator to perform a function test; generating signals based on the test parameters through the video generator; controlling a standard measuring apparatus to receive the signals and to convert the signals into test values; determining whether the video signal generator passes the function test by comparing the test values with a standard working range of the video signal generators; and generating a test report based on the test values and the test parameters. A system for testing a video signal generator is also provided. By utilizing the present invention, errors can be reduced and test efficiency can be enhanced.

Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

Abstract: Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.

Abstract: Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.

Abstract: Capacitor anodes that include metallic columns formed on a substrate so as to form a porous microstructure and methods of making the anodes are described. The metallic columns can be distinct from one another and project outward from the substrate. Also described is the formation of the metallic columns on the substrate by vapor deposition, including glancing angle deposition (GLAD), and by etching a portion of a metal layer. High capacitance capacitors made from the capacitor anodes are also described.

Abstract: Nitrided valve metals are described, such as nitrided tantalum and nitrided niobium. The nitrided valve metals preferably have improved flow properties, higher Scott Densities, and/or improved pore size distribution which leads to improved physical properties of the valve metal and improved electrical properties once the valve metal is formed into a capacitor anode. Processes for preparing a nitrided valve metal are further described and involve nitriding the valve metal at a sufficient temperature and pressure during a heat treatment that is prior to the deoxidation step. Capacitor anodes and other products incorporating the valve metals of the present invention are further described.

Abstract: A method of heat treating metal powder and/or metal oxide powder by microwave energy is described. Furthermore, products made by the various processes of the present invention are further described.

Abstract: Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, comprising: a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: The present invention relates to a BGA package having a substrate with an exhaust hole. The BGA package comprises the substrate, a chip and a molding compound. The substrate comprises a plurality of plated through holes electrically connecting an upper surface and a lower surface of the substrate. At least one of the plated through holes located at a predetermined location of the substrate is selected to be formed as an exhaust hole. The exhaust hole passes through the upper surface and the lower surface. When the molding compound is formed to seal the chip, the air inside a mold cavity can be exhausted through the exhaust hole in the selected plated through hole.

Abstract: Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.

Abstract: Capacitor anodes that include metallic columns formed on a substrate so as to form a porous microstructure and methods of making the anodes are described. The metallic columns can be distinct from one another and project outward from the substrate. Also described is the formation of the metallic columns on the substrate by vapor deposition, including glancing angle deposition (GLAD), and by etching a portion of a metal layer. High capacitance capacitors made from the capacitor anodes are also described.

Abstract: A method of pre-etching a glass substrate for reducing a post-releasing time is provided. The method includes steps of: The glass substrate, a micro-structure and a silicon substrate are provided. The glass substrate is connected with the micro-structure. A first etching process is performed on the glass substrate for reducing the area of the glass substrate connected with the micro-structure. The micro-structure is connected with the silicon substrate and a second etching process is performed on the glass substrate for removing the micro-structure from the glass substrate.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.