Patents by Inventor Shi Zhengrong

Shi Zhengrong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOVOLTAIC DEVICE STRUCTURE AND METHOD
    Publication number: 20150318413
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Application
    Filed: June 25, 2015
    Publication date: November 5, 2015
    Applicants: Suntech Power International Ltd., NewSouth Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
  • Method of forming doped regions in a photovoltaic device
    Patent number: 9136126
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: September 15, 2015
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
  • PHOTOVOLTAIC DEVICE STRUCTURE AND METHOD
    Publication number: 20120125424
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Application
    Filed: February 11, 2010
    Publication date: May 24, 2012
    Applicants: Suntech Power International Ltd., New South Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham