Abstract: The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b.

Abstract: An electron beam control device controls an electron beam for use, such as an electron beam exposure device and the like, wherein a track of an electron beam is not adversely Influenced by the amount of magnetic variation occurring influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure and the like, wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.

Abstract: There is provided an electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a track of an electron beam is not adversely influenced by the amount of magnetic variation occurring from surrounding influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.

Abstract: The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1 to produce a phase difference in transmitted light, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b.

Abstract: A pattern drawing apparatus is provided. This apparatus draws a pattern on an object by irradiating the object with an electron beam. A pattern data corresponding to the pattern to be drawn is stored in a memory. The pattern data is sent to a controller that controls irradiation of the electron beam to the object. Check is made whether the controller correctly controls the irradiation of the electron beam in accordance with the stored pattern data. Another memory stores the pattern data per a predetermined number of bits included in the pattern data. The bit data is sent to the controller that generates high and low voltages to control the irradiation of the electron beam. A counter counts the numbers of bits and high or low voltages. A comparator compares the counted numbers of bits and voltages. The comparison results are sent to an indicator that indicates an error when the counted numbers are different from each other. The counted numbers themselves may be indicated.