Patents by Inventor Shiang-Shiou Yen

Shiang-Shiou Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-controlled rectifier and an ESD clamp circuit
    Patent number: 9741704
    Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: August 22, 2017
    Assignees: National Chiao Tung University, Himax Technologies Limited
    Inventors: Chun-Yen Chang, Shiang-Shiou Yen, Shao-Chin Chang, Che-Wei Chiang
  • SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT
    Publication number: 20170077080
    Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
    Type: Application
    Filed: November 3, 2016
    Publication date: March 16, 2017
    Inventors: Chun-Yen Chang, Shiang-Shiou Yen, Shao-Chin Chang, Che-Wei Chiang
  • Silicon-controlled rectifier and an ESD clamp circuit
    Patent number: 9520389
    Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: December 13, 2016
    Assignees: National Chiao Tung University, Himax Technologies Limited
    Inventors: Chun-Yen Chang, Shiang-Shiou Yen, Shao-Chin Chang, Che-Wei Chiang