Patents by Inventor Shiau-Shin Cheng

Shiau-Shin Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8053769
    Abstract: A transistor includes a first semiconductor layer associated with a first electrode; a second semiconductor layer associated with a second electrode; and a discontinuous layer between the first and second semiconductor layer. The discontinuous layer has a plurality of openings being formed on a non-uniform organic surface. Applications of the transistor include an inverter that operates at low supply voltage and high frequency.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: November 8, 2011
    Assignee: Academia Sinica
    Inventors: Chih-Wei Chu, Shiau-Shin Cheng
  • Publication number: 20100073056
    Abstract: A transistor includes a first semiconductor layer associated with a first electrode; a second semiconductor layer associated with a second electrode; and a discontinuous layer between the first and second semiconductor layer. The discontinuous layer has a plurality of openings being formed on a nonuniform organic surface. Applications of the transistor include an inverter that operates at low supply voltage and high frequency.
    Type: Application
    Filed: September 23, 2009
    Publication date: March 25, 2010
    Applicant: Academia Sinica
    Inventors: Chih-Wei Chu, Shiau-Shin Cheng
  • Patent number: 7560728
    Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: July 14, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Yen Lin, Tzu-Min Ou, Chuan-Yi Yang, Shu-Ting Chou, Chun-Yuan Huang, I-Min Chan, Shiau-Shin Cheng, Yi-Jen Chan
  • Publication number: 20070176166
    Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
    Type: Application
    Filed: April 25, 2006
    Publication date: August 2, 2007
    Inventors: Shih-Yen Lin, Tzu-Min Ou, Chuan-Yi Yang, Shu-Ting Chou, Chun-Yuan Huang, I-Min Chan, Shiau-Shin Cheng, Yi-Jen Chan