Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enables and disabled, wherein each amplification path includes an output impedance modification element and a phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.

Abstract: An advanced balanced RF power amplifier circuit is provided. The RF power amplifier has a pair of RF amplification paths constructed to efficiently operate in a high-power mode. When instructed to operate in a low-power mode, one of the amplification paths is deactivated, and optionally, an impedance device is also set to operate at a low-power impedance value. With only one path operating in low-power mode, the network RF topology has changed from the topology of the high-power mode. This new topology provides increased impedance on the active RF amplification path as compared to when both RF amplification paths were active. This increased impedance causes the RF power amplifier to operate more efficiently in its low-power mode.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: A power amplifier having a phase shift and impedance transformation element is disclosed. The power amplifier comprises a plurality of amplification paths, a first phase shift element at an input of each amplification path and a second phase shift element at an output of each amplification path. The amplifier also comprises an impedance transformation element associated with the second phase shift element and a power combiner configured to combine an output of each amplification path into a single output.

Abstract: A power amplifier having a phase shift and impedance transformation element is disclosed. The power amplifier comprises a plurality of amplification paths, a first phase shift element at an input of each amplification path and a second phase shift element at an output of each amplification path. The amplifier also comprises an impedance transformation element associated with the second phase shift element and a power combiner configured to combine an output of each amplification path into a single output.