Patents by Inventor Shibata Jun

Shibata Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a passivation film of InP compound semiconductor
    Patent number: 5147827
    Abstract: A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and constituent elements of the device, and the concentration of the elements included in the passivation film changes gradually through the interface between the passivation film and the device. Such a passivation film is formed by the oxidation or anodic oxidation of a device soaked in an aqueous solution of hydrogen oxide containing metallic ions such as Fe.sup.2+, Fe.sup.3+, Cu.sup.+, Cu.sup.2+, Co.sup.2+ or Cr.sup.2+ under the control of the temperature of the solution.
    Type: Grant
    Filed: June 6, 1991
    Date of Patent: September 15, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toyoji Chino, Kenichi Matsuda, Shibata Jun