Abstract: A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a capacitive insulating film covering the entire surfaces of the plurality of lower electrodes, and an upper electrode covering the surfaces of the plurality of lower electrodes from above with the capacitive insulating film interposed between the upper electrode and the plurality of lower electrodes. The upper electrode is formed with a stress-relieving part, such as a crack, a notch or a recess.