Abstract: The present disclosure provides a detection device for Micro-LED and a method manufacturing thereof, and a detection apparatus for Micro-LED, and the detection device for Micro-LED comprises: a substrate, and a first via and a second via penetrating through the substrate; the substrate comprises a first surface and a second surface which are opposite to each other; the first via and the second via are respectively arranged corresponding to a first pole and a second pole of a Micro-LED to be detected, and the detection device for Micro-LED further comprises: a first detection component and a second detection component on the first surface of the substrate.

Abstract: The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device.

Abstract: A display substrate, a method for fabricating the same, and a display device are provided. The display substrate includes: a substrate 100 that includes a first via filled with a first conductive section 4011; a drive thin film transistor that is placed on a first side of the substrate and includes a first terminal 2051; and a light emitting diode chip 300 that is placed on a second side of the substrate distal to the drive thin film transistor; wherein the light emitting diode chip 300 includes a first lead 301 and a second lead 302; the first lead 301 is in electrical contact with the first terminal 2051 through the first conductive section 4011; and the second lead 302 is in electrical contact with a second electrode 402 that is placed on the second side of the substrate.

Abstract: The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device.

Abstract: A white light quantum dot light emitting diode device, including: a substrate; an anode layer formed on the substrate; a hole injection layer formed on the anode layer; a hole transport layer formed on the hole injection layer; a plurality of quantum dot layers formed on the hole injection layer, wherein the plurality of quantum dot layers includes a blue quantum dot layer, a green quantum dot layer, and a red light quantum dot layer; a plurality of isolation layers, each of the isolation layers is formed between any two of the plurality of quantum dot layers; an electron transport layer formed on the plurality of quantum dot layers; and a cathode layer formed on the electron transport layer.

Abstract: A display substrate, a method for fabricating the same, and a display device are provided. The display substrate includes: a substrate 100 that includes a first via filled with a first conductive section 4011; a drive thin film transistor that is placed on a first side of the substrate and includes a first terminal 2051; and a light emitting diode chip 300 that is placed on a second side of the substrate distal to the drive thin film transistor; wherein the light emitting diode chip 300 includes a first lead 301 and a second lead 302; the first lead 301 is in electrical contact with the first terminal 2051 through the first conductive section 4011; and the second lead 302 is in electrical contact with a second electrode 402 that is placed on the second side of the substrate.

Abstract: An OLED display panel and a display device are provided. The OLED display panel includes doped light emitting layers formed by doping the same main blue fluorescent luminescent material with the same secondary thermally activated delayed fluorescence material. A doping concentration of the secondary material in a first doped light emitting layer and a doping concentration of the secondary material in a second doped light emitting layer are different. It is advantageous for different light emitting layers to emit different wavelengths so as to realize generating multiple electroluminescence peaks, broaden the luminescence spectrum, improve a color rendering index, and thus achieve the effect of simplifying a light emitting layer structure.

Abstract: The present disclosure provides a detection device for Micro-LED and a method manufacturing thereof, and a detection apparatus for Micro-LED, and the detection device for Micro-LED comprises: a substrate, and a first via and a second via penetrating through the substrate; the substrate comprises a first surface and a second surface which are opposite to each other; the first via and the second via are respectively arranged corresponding to a first pole and a second pole of a Micro-LED to be detected, and the detection device for Micro-LED further comprises: a first detection component and a second detection component on the first surface of the substrate.

Abstract: The disclosure provides a fabricating method of a QLED device and a QLED device. In the fabricating method of a QLED device, a mixed light-emitting layer is formed by doping a quantum dot material with a second hole transporting material having a valence band energy level between the quantum dot material and the first hole transporting material; a stepped barrier between the first hole transporting material and the doped second hole transporting material is used to enhance the hole injection; simultaneously, the first hole transporting material with a higher valence band energy level can block the electrons on one side of the hole transport layer close to the cathode to weaken the injection of electrons into the mixed light-emitting layer, thereby promoting the balance of carriers in the mixed light-emitting layer, improving the carrier recombination efficiency, and then improving the luminous efficiency and brightness of the QLED device.

Abstract: Provided is an organic light emitting diode display. The OLED display includes a thin film transistor substrate, a white OLED layer, a quantum dot photoluminescence film and a color filter film. The OLED display includes sub-pixels, which are sequentially disposed. The sub-pixels include a red sub-pixel, a green sub-pixel and a blue sub-pixel. A region of the quantum dot photoluminescence film corresponding to the red sub-pixel is provided with red quantum dots, and a region corresponding to the green sub-pixel is provided with green quantum dots. The red quantum dots and the green quantum dots are excited by white light emitted by the WOLED layer to emit high-purity red light and green light, respectively, and then filtered by the color filter film to be emitted. Thus, the OLED display has higher color saturation, which effectively broadens color gamut and can fully utilize the short-wavelength light.

Abstract: The present disclosure provides a packaging method and a package structure of a QLED device. The packaging method of the QLED device forming a thin film encapsulation layer in which a plurality of inorganic barrier layers and at least one organic buffer layer are arranged alternately on a QLED device to seal the QLED device against water and oxygen, and the organic buffer layer is further doped with a thermal conducting material, so that the heat generated by the QLED device can be promptly transmitted through the thin film encapsulation layer to improve the heat dissipation of the thin film encapsulation layer, thereby improving the light extraction efficiency and the service life of the QLED device.

Abstract: Provided is an organic light emitting diode display. The OLED display includes a thin film transistor substrate, a white OLED layer, a quantum dot photoluminescence film and a color filter film. The OLED display includes sub-pixels, which are sequentially disposed. The sub-pixels include a red sub-pixel, a green sub-pixel and a blue sub-pixel. A region of the quantum dot photoluminescence film corresponding to the red sub-pixel is provided with red quantum dots, and a region corresponding to the green sub-pixel is provided with green quantum dots. The red quantum dots and the green quantum dots are excited by white light emitted by the WOLED layer to emit high-purity red light and green light, respectively, and then filtered by the color filter film to be emitted. Thus, the OLED display has higher color saturation, which effectively broadens color gamut and can fully utilize the short-wavelength light.

Abstract: The disclosure provides a fabricating method of a QLED device and a QLED device. In the fabricating method of a QLED device, a mixed light-emitting layer is formed by doping a quantum dot material with a second hole transporting material having a valence band energy level between the quantum dot material and the first hole transporting material; a stepped barrier between the first hole transporting material and the doped second hole transporting material is used to enhance the hole injection; simultaneously, the first hole transporting material with a higher valence band energy level can block the electrons on one side of the hole transport layer close to the cathode to weaken the injection of electrons into the mixed light-emitting layer, thereby promoting the balance of carriers in the mixed light-emitting layer, improving the carrier recombination efficiency, and then improving the luminous efficiency and brightness of the QLED device.

Abstract: The present application provides a flexible display apparatus and a white light organic electroluminescent device including an anode, a first blue light emitting unit, a second yellow light emitting unit, a third blue light emitting unit, and a cathode successively laminated and disposed, wherein the second yellow light emitting unit including a red light emitting layer. The flexible display apparatus and a white light organic electroluminescent device provided by the application enhances the luminous intensity of the red light band in the three-laminated layer white light organic electroluminescent device by adding a red light emitting layer, and optimizes the spectrum of the white OLED device, when used as a display device it can reduce power consumption of the display apparatus.

Abstract: This disclosure provides a quantum dot light-emitting diode comprising a first electron layer, an organic light-emitting layer, a first hole layer, a second electron layer, a quantum dot light-emitting layer, and a second hole layer. The first electron layer and the first hole layer are configured to transport first electrons and first holes to the organic light-emitting layer. The organic light-emitting layer is configured to emit a first light by recombining the first electrons and the first holes. The second electron layer and the second hole layer are configured to transport second electrons and second holes to the quantum dot light-emitting layer. The quantum dot light-emitting layer is configured to emit a second light by recombining the second electrons and the second holes.

Abstract: The present disclosure provides a packaging method and a package structure of a QLED device. The packaging method of the QLED device forming a thin film encapsulation layer in which a plurality of inorganic barrier layers and at least one organic buffer layer are arranged alternately on a QLED device to seal the QLED device against water and oxygen, and the organic buffer layer is further doped with a thermal conducting material, so that the heat generated by the QLED device can be promptly transmitted through the thin film encapsulation layer to improve the heat dissipation of the thin film encapsulation layer, thereby improving the light extraction efficiency and the service life of the QLED device.

Abstract: This disclosure provides a quantum dot light-emitting diode comprising a first electron layer, an organic light-emitting layer, a first hole layer, a second electron layer, a quantum dot light-emitting layer, and a second hole layer. The first electron layer and the first hole layer are configured to transport first electrons and first holes to the organic light-emitting layer. The organic light-emitting layer is configured to emit a first light by recombining the first electrons and the first holes. The second electron layer and the second hole layer are configured to transport second electrons and second holes to the quantum dot light-emitting layer. The quantum dot light-emitting layer is configured to emit a second light by recombining the second electrons and the second holes.

Abstract: The present application provides a flexible display apparatus and a white light organic electroluminescent device including an anode, a first blue light emitting unit, a second yellow light emitting unit, a third blue light emitting unit, and a cathode successively laminated and disposed, wherein the second yellow light emitting unit including a red light emitting layer. The flexible display apparatus and a white light organic electroluminescent device provided by the application enhances the luminous intensity of the red light band in the three-laminated layer white light organic electroluminescent device by adding a red light emitting layer, and optimizes the spectrum of the white OLED device, when used as a display device it can reduce power consumption of the display apparatus.

Abstract: The invention provides a display apparatus and a method for manufacturing the same, relates to the field of display technology, and solves the problem of low display luminance due to the existing display apparatus being affected by other film layers. A display apparatus comprises a light emitting unit and further comprises several layers of thin film located in the light emission path of the light emitting unit, and at least one of the several layers of thin film has nanoparticles.

Abstract: The present invention discloses organic light emitting device, manufacturing method thereof, organic light emitting display device and driving method thereof. The organic light emitting device comprises a substrate and a first electrode layer, an organic layer and a second electrode layer positioned on the substrate, the organic layer is arranged between the first and second electrode layers, the first electrode layer, the organic layer and the second electrode layer form a laminated region for emitting light in a first specific color in a positive half cycle of alternating current and an inverted region for emitting light in a second specific color in a negative half cycle of alternating current, and at least portions of projections of the laminated region and the inverted region on the substrate are not overlapped. Technical solutions of the present invention render the organic light emitting device with adjustable light color and prolonged service life.