Patents by Inventor Shichen Fu

Shichen Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240420949
    Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 19, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Woongsik Nam, Euhngi Lee, Tianyang Li, Jisung Park, Hang Yu, Deenesh Padhi, Shichen Fu, Yufeng Jiang
  • Publication number: 20230290636
    Abstract: A method for producing doped, van der Waals ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 14, 2023
    Applicant: THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
    Inventors: Eui-Hyeok Yang, Shichen Fu, Kyungnam Kang