Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.

Abstract: Methods of season chamber components, methods of processing substrates, and seasoned chamber components are provided. Methods include flowing one or more deposition precursors at a deposition temperature into a substrate processing region of a semiconductor processing chamber housing the semiconductor processing chamber component. Methods include where the substrate processing region includes an electrostatic chuck, and the one or more deposition precursors are generally free of a nitride precursor. Methods include depositing at least a first seasoning layer on the semiconductor processing chamber component, where the at least the first seasoning layer has a thickness of greater than 0.5 ?m.

Abstract: Embodiments disclosed herein generally relate to a substrate support and a method for fabricating the same. The substrate support includes a heater having a high resistivity, such as a resistivity between 1E8 ohm-centimeter (ohm-cm) and 1E11. The resistivity of the heater is configured to prevent arcing.

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.

Abstract: A method for producing doped, van der Waals ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.