Patents by Inventor Shichen Fu

Shichen Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IN SITU DOPING OF IRONS INTO MOS2 TOWARD TWO-DIMENSIONAL DILUTE MAGNETIC SEMICONDUCTORS
    Publication number: 20230290636
    Abstract: A method for producing doped, van der Waals ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 14, 2023
    Applicant: THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
    Inventors: Eui-Hyeok Yang, Shichen Fu, Kyungnam Kang