Abstract: Disclosed are a compute-in-memory array and module, and a data computing method; a storage cell is configured to form an array used for computation; the storage cell consists of bitcells serially connected in sequence; a bitcell comprises a switching device and a resistive memory; the switching device is connected in series or in parallel with the resistive memory; the write resistance value of the storage cell is determined by means of controlling the switching state of the switching device so as to change the resistance state of the resistive memory. Since resistive memories have different resistance states, a resistive memory can be set in different resistance states by means of the switching state of the switching device, such that the storage cell is at a required write resistance value, thereby enabling the quick implementation of a write operation of the bitcell.

Abstract: A multifunctional fitness facility includes a pedal, a motor compartment and a pulley block which are connected. The motor compartment is provided therein with a motor, a training rope is wound on the motor, and an end of the training rope passes out of the pulley block. A vertical support assembly fixedly connected to the motor compartment is further included. The vertical support assembly is provided with a display screen, the vertical support assembly and the pedal are respectively provided with a pulley mounting structure, and the pulley block is detachably mounted in the bracket assembly or the pulley mounting structure on the pedal. The multifunctional fitness facility is additionally provided with a vertical support assembly, and a pulley block can be mounted onto the vertical support assembly or a pedal according to the requirements of training actions, so as to realize standing training or sitting or lying training.

Abstract: Disclosed are a compute-in-memory array and module, and a data computing method; a storage cell is configured to form an array used for computation; the storage cell consists of bitcells serially connected in sequence; a bitcell comprises a switching device and a resistive memory; the switching device is connected in series or in parallel with the resistive memory; the write resistance value of the storage cell is determined by means of controlling the switching state of the switching device so as to change the resistance state of the resistive memory. Since resistive memories have different resistance states, a resistive memory can be set in different resistance states by means of the switching state of the switching device, such that the storage cell is at a required write resistance value, thereby enabling the quick implementation of a write operation of the bitcell.