Abstract: An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

Abstract: An object of the invention is to provide a defect inspection method which can prevent the failure in detecting a defect, caused by saturation of a pattern signal obtained by inspecting an inspected object, so that the investigation of the cause for defect occurrence can be done earlier. To achieve this object, according to an embodiment of the invention, there is provided a defect inspection that irradiates laser light on an inspected object having a pattern formed thereon, detects a signal from the inspected object and thereby detects a defect, the inspection including: inputting pattern information contained in layout data on the inspected object; determining based on the inputted pattern information, at least one of arrangement, repetitiveness and density for each of a plurality of inspected areas of the inspected object; estimating a saturation level of the detected signal based on the determination result; and determining a transmittance condition so that the signal does not saturate.

Abstract: An object of the invention is to provide a defect inspection method which can prevent the failure in detecting a defect, caused by saturation of a pattern signal obtained by inspecting an inspected object, so that the investigation of the cause for defect occurrence can be done earlier. To achieve this object, according to an embodiment of the invention, there is provided a defect inspection that irradiates laser light on an inspected object having a pattern formed thereon, detects a signal from the inspected object and thereby detects a defect, the inspection including: inputting pattern information contained in layout data on the inspected object; determining based on the inputted pattern information, at least one of arrangement, repetitiveness and density for each of a plurality of inspected areas of the inspected object; estimating a saturation level of the detected signal based on the determination result; and determining a transmittance condition so that the signal does not saturate.

Abstract: A data processing apparatus according to the present invention takes in a plurality of inspection, image and attribute data output from an inspection apparatus, a review SEM image, coordinate information of hot spots found by simulation, and CAD information in the hot spots, and displays these kinds of information side by side. Tuning of inspection conditions in the inspection apparatus is facilitated from a view point of the detection rate of the hot spots. In addition, it is made possible to easily implement a fixed point observation function in a conventional review SEM by outputting coordinate data which can be read by the review SEM. Cooperation among simulation data, the inspection apparatus, and the review SEM is facilitated.

Abstract: An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

Abstract: A sample inspection system having a sample stage holding a sample to be inspected, electron beam optics so as to radiate an electron beam to the sample, a detector unit that detects a secondly generated signal generated in response to radiation of the sample by the electron beam, a storage for storing a plurality of images obtained from the generated signal and information for classifying the plurality of images by a type of defect in the sample, and an image processing unit. The image processing unit retrieves any of the plurality of images and classifies the retrieved image depending on the type of defect including an electrical defect and a defect in the figure.

Abstract: A sample inspection system having a sample stage holding a sample to be inspected corresponding to a selected file, electron beam optics so as to radiate an electron beam to the sample, a detector unit that detects a secondly generated signal attributable to the electron beam, a storage for storing a plurality of images obtained from the secondly generated signal and information for classifying the plurality of images by a type of defect in the sample, and an image processing unit. The image processing unit retrieves any of the plurality of images and classifies the retrieved image depending on the type of defect including an electrical defect and a defect in the figure.

Abstract: A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.

Abstract: A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.

Abstract: There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized. On the occasion of identifying the position to be reviewed on a sample and forming an image through irradiation of electron beam on the basis of the positional information of defect detected with the other inspection instrument, an electrical defect can be reviewed with the voltage contrast mode by designating the electron beam irradiation condition, detectors and detecting condition depending on a kind of defect to be reviewed.

Abstract: There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized.