Abstract: A vapor phase growth apparatus according to an embodiment includes: a reactor; a holder provided in the reactor, a substrate being placed on the holder; a first source gas flow path configured to supply a first source gas containing silicon and chlorine into the reactor; and a purge gas flow path configured to supply a purge gas containing silicon and chlorine into the reactor, the atomic concentration of silicon in the purge gas being lower than that in the first source gas.

Abstract: A film deposition method according to an embodiment includes rotating a wafer mounted on a susceptor in a reaction chamber. Next, a temperature of the wafer is controlled such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC film on the wafer, a force of friction generated on a contact surface between the wafer and the susceptor becomes larger than a force of inertia generated in a direction of rotation of the wafer.

Abstract: A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.

Abstract: According to a manufacturing apparatus for semiconductor device according to an embodiment of the present invention, a reaction chamber includes a gas introduction unit and a deposition reaction unit. The gas introduction unit includes a gas introduction port for introducing process gas and a buffer unit into which the process gas is introduced from the gas introduction port. In the deposition reaction unit, deposition reaction is performed on a wafer by the process gas. A rectifying plate provided under an area at least a part of which is enclosed by the buffer unit supplies the process gas introduced from a side of the buffer unit in a horizontally dispersed state to an upper surface of the wafer in a rectified state.