Patents by Inventor Shigeaki Ohkawa

Shigeaki Ohkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit having a spark killer diode
    Patent number: 5798560
    Abstract: Buried N.sup.+ layers are formed in the surface of a substrate, on which first and second epitaxial layers are successively deposited. A vertical PNP transistor formed in the surface of the first epitaxial layer has a buried collector layer, a collector lead region, and a base contact region. The buried collector layer, the collector lead region, and the base contact region provide a buried anode layer, an anode lead region, and a cathode contact region, respectively, of a diode. The vertical PNP transistor and the diode are surrounded by N.sup.+ lead regions and the buried N.sup.+ layers.
    Type: Grant
    Filed: October 30, 1996
    Date of Patent: August 25, 1998
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Shigeaki Ohkawa, Toshiyuki Ohkoda