Abstract: An image display device includes a display unit which displays a first image and a second image, and a projection optical system which directs light of the first image and light of the second image toward a windshield. The display unit displays the first image and the second image in different display areas on the same plane. The projection optical system sets an image point of the light of the first image and an image point of the light of the second image, so that a first virtual image and a second virtual image are formed at positions having different distances from a viewing point within a visible area.

Abstract: An image display device includes a display unit which displays a first image and a second image, and a projection optical system which directs light of the first image and light of the second image toward a windshield. The display unit displays the first image and the second image in different display areas on the same plane. The projection optical system sets an image point of the light of the first image and an image point of the light of the second image, so that a first virtual image and a second virtual image are formed at positions having different distances from a viewing point within a visible area.

Abstract: An image display device includes a display unit which displays a first image and a second image, and a projection optical system which directs light of the first image and light of the second image toward a windshield. The display unit displays the first image and the second image in different display areas on the same plane. The projection optical system sets an image point of the light of the first image and an image point of the light of the second image, so that a first virtual image and a second virtual image are formed at positions having different distances from a viewing point within a visible area.

Abstract: An image display device includes a display unit which displays a first image and a second image, and a projection optical system which directs light of the first image and light of the second image toward a windshield. The display unit displays the first image and the second image in different display areas on the same plane. The projection optical system sets an image point of the light of the first image and an image point of the light of the second image, so that a first virtual image and a second virtual image are formed at positions having different distances from a viewing point within a visible area.

Abstract: An image display device includes a display unit which displays a first image and a second image, and a projection optical system which directs light of the first image and light of the second image toward a windshield. The display unit displays the first image and the second image in different display areas on the same plane. The projection optical system sets an image point of the light of the first image and an image point of the light of the second image, so that a first virtual image and a second virtual image are formed at positions having different distances from a viewing point within a visible area.

Abstract: A skin cosmetic composition comprising: a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein dispersed in an aqueous medium; a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein; and a process for preparing a hydrogel particle comprising the steps of discharging an oil component-emulsified or dispersed solution prepared by dissolving a non-crosslinked hydrogel in an aqueous solution, with vibration from an orifice to form droplets; and cooling the droplets to solidify.

Abstract: A skin cosmetic composition comprising: a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein dispersed in an aqueous medium; a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein; and a process for preparing a hydrogel particle comprising the steps of discharging an oil component-emulsified or dispersed solution prepared by dissolving a non-crosslinked hydrogel in an aqueous solution, with vibration from an orifice to form droplets; and cooling the droplets to solidify.

Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.

Abstract: A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.

Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.

Abstract: A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.

Abstract: A multilayer film optical filter includes a multilayer film including a plurality of dielectric material thin films repeatedly laminated on a substrate and having different refractive indexes. The multilayer film optical filter further includes a relaxation layer composed of a single material, having a thickness in the range of 1 to 10 &mgr;m, and provided below the multilayer film near the substrate, for relaxing the influence of an error in thickness measurement due to a temperature rise of the substrate in an initial stage of deposition.

Abstract: Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C.

Abstract: A multilayer film optical filter includes a multilayer film including a plurality of dielectric material thin films repeatedly laminated on a substrate and having different refractive indexes. The multilayer film optical filter further includes a relaxation layer composed of a single material, having a thickness in the range of 1 to 10 &mgr;m, and provided below the multilayer film near the substrate, for relaxing the influence of an error in thickness measurement due to a temperature rise of the substrate in an initial stage of deposition.

Abstract: Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C.

Abstract: A skin cosmetic composition comprising: a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein dispersed in an aqueous medium; a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein; and a process for preparing a hydrogel particle comprising the steps of discharging an oil component-emulsified or dispersed solution prepared by dissolving a non-crosslinked hydrogel in an aqueous solution, with vibration from an orifice to form droplets; and cooling the droplets to solidify.

Abstract: Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.